Optical investigation of coupled GaAs/Al_(0.3)Ga_(0.7)As double quantum wells separated by AlAs barriers

机译：由AlAs势垒分隔的GaAs / Al_（0.3）Ga_（0.7）As耦合双量子阱的光学研究

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Electronically symmetric coupled double quantum wels are structures where two quantum wells are separated by a thin barrier layer. Both experiment and theory show that when the barrier is so narrow that there is considerable overlap of wave functions in the two wells, the single quantum well electronic one-particle states split into symmetric and antisymmetric states with different energy levels. The splitting of energy levels is very sensitive to barrier width and barrier height and increases with decreasing barrier width and with decreasing barrier height.

机译：电对称耦合的双量子韦尔是其中两个量子阱被薄阻挡层隔开的结构。实验和理论都表明，当势垒太窄以至于两个阱中的波函数有相当大的重叠时，单量子阱电子单粒子态会分裂为具有不同能级的对称态和反对称态。能级的划分对势垒宽度和势垒高度非常敏感，并且随着势垒宽度的减小和势垒高度的减小而增加。

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《NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999》|1999年|p.91-95|共5页
会议地点 Jaszowiec(PL)
作者
G. Sek; K. Ryczko; M. Ciorga; L. Bryja; M. Kubisa; J. Misiewicz; M. Bayer; J. Koeth; A. Forchel;
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正文语种 eng
中图分类无线电电子学、电信技术;
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Optical investigation of coupled GaAs/Al_(0.3)Ga_(0.7)As double quantum wells separated by AlAs barriers

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