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首页> 外文会议>NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999 >Excitons in the two-dimensional hole gas at the Al_(0.5)Ga_(0.5)As/GaAs interface
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Excitons in the two-dimensional hole gas at the Al_(0.5)Ga_(0.5)As/GaAs interface

机译：Al_（0.5）Ga_（0.5）As / GaAs界面处的二维空穴气体中的激子

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摘要

Radiative recombination processes associated with the Al_xGa_(1-x)As/GaAs heterojunction interface have been intensively studied recently. Yuan et al. [1] first observed the PL line on the low energy isde of the GaAs exciton, the so-called the H-band, from a single heterojunction. They attributed the H-band emission to two-dimensional (2D) carriers that tunnel from the triangular well at the interface and recombine with free carriers (3D) in the flat band region. Most later papers concerned n-type samples with 2D electrons recombining with free holes [2-4]. Some papers [2,3,5] agreed with Yuan's explanation of the H-band peak, but other authors concluded that recombining electrons and holes are bound by Coulomb interaction [4, 6]. In this paper we present results of experimental and theoretical studies which shed new light ont he origin of the H-band emission phenomenon.
机译：最近已经深入研究了与Al_xGa_（1-x）As / GaAs异质结界面相关的辐射复合过程。 Yuan等。 [1]首先从单个异质结观察到GaAs激子的低能岛上的PL线，即所谓的H波段。他们将H波段发射归因于二维（2D）载波，该载波从界面处的三角形阱隧穿，并与平坦带区域中的自由载波（3D）重组。后来的大多数论文都涉及带有二维电子和自由空穴重组的n型样品[2-4]。一些论文[2,3,5]同意袁对H谱带峰的解释，但其他作者得出结论，电子和空穴的复合受库仑相互作用的约束[4，6]。在本文中，我们介绍了实验和理论研究的结果，为H波段发射现象的起源提供了新的启示。

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