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首页> 外文会议>NATO Advanced Study Institute on Photovoltaic and Photoactive Materials - Properties, Technology and Applications Sep 9-21, 2001 Sozopol, Bulgaria >EVALUATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY SCLC MEASUREMENTS
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EVALUATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY SCLC MEASUREMENTS

机译：通过SCLC测量评估a-Si：H中的间隙状态分布

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摘要

Den Boer's analysis of n~+-i-n~+ samples with different thicknesses gives information about states in different regions of the gap. For thin samples, the density of states obtained by analyzing the J-V data yields the overlapping region of mid gap states and conduction band tail states, which resides in the upper portion of the gap. For thick samples, the explored region is related with to the mid-gap density of states. With a high enough bias, the Fermi level can be swept into the upper part of the gap. We emphasise that in a good quality sample, even if it is a thin one, the den Boer approach to SCLC gives correct information about the density of states. This information comes from the states in a limited upper region of the gap, because of the low activation energy featured by thin samples.
机译：Den Boer对不同厚度的n〜+ -i-n〜+样品的分析提供了有关间隙不同区域中状态的信息。对于薄样品，通过分析J-V数据获得的状态密度会产生中间间隙状态和导带尾部状态的重叠区域，该区域位于间隙的上部。对于厚样品，探查区域与中间间隙的状态密度有关。在足够高的偏压下，费米能级可以扫入间隙的上部。我们强调，在一个高质量的样本中，即使它是一个稀疏样本，den Boer的SCLC方法也能提供有关状态密度的正确信息。该信息来自间隙的有限上部区域中的状态，这是因为稀薄样品具有较低的活化能。

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