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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >A STUDY ON SURFACE ROUGHNESS ON THE VIA SIDE-WALLS IN LOW-K ORGANIC POLYMER FILM ETCHING IN DUAL-DAMASCENE TECHNOLOGY DEVELOPMENT
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A STUDY ON SURFACE ROUGHNESS ON THE VIA SIDE-WALLS IN LOW-K ORGANIC POLYMER FILM ETCHING IN DUAL-DAMASCENE TECHNOLOGY DEVELOPMENT

机译：双大马士革技术发展中低K有机聚合物膜刻蚀中侧壁表面粗糙度的研究

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摘要

The organic low-k dielectric materials are one of the potential materials for low-k and ultra low-k interconnect process technology development. In this work, a qualitative study was performed on surface roughness of via side walls in etch process development for dual damascene technology. It was found that characterisation of the blanket low-k films after plasma exposures will not preclude a problem-free behaviour of post patterned structures eg., vias and trenches. Surface morphology might be pattern dependant when exposed to plasma etch conditions. We have performed this study in the context of spin-on low-k organic polymer material, SiLK~(TM) (A Trade Mark of Dow Chemicals). When measured on blanket films, the low-k material exhibited a marginal roughness levels on the surface after exposing to plasma chemistries that are used in the dry etch process to form the dual damascene structures. However during etching of vias, side-wall roughness was observed on vias significantly increased as compared to the roughness levels seen on the blanket films. This was attributed to the patterned dependancy on etch mechanism. Further, reduction of side-wall roughness was achieved by optimising the etch recipe during dual-damascene formation. This was confirmed by a qualitative method of SEM cross-section pictures.
机译：有机低k介电材料是低k和超低k互连工艺技术开发的潜在材料之一。在这项工作中，在双镶嵌技术的蚀刻工艺开发中，对通孔侧壁的表面粗糙度进行了定性研究。已经发现，在等离子暴露之后表征毯式低k膜不会排除后图案化的结构（例如通孔和沟槽）的无问题行为。当暴露于等离子体蚀刻条件下时，表面形态可能取决于图案。我们已经在旋转低k有机聚合物材料SiLK〜（Dow Chemicals的商标）的背景下进行了这项研究。当在覆盖膜上进行测量时，低k材料在暴露于用于干法蚀刻工艺以形成双镶嵌结构的等离子体化学处理后，在表面上显示出一定程度的边缘粗糙度。然而，在蚀刻通孔的过程中，观察到的通孔的侧壁粗糙度与覆盖膜上看到的粗糙度相比明显增加。这归因于图案化对蚀刻机制的依赖性。此外，通过在双大马士革形成期间优化蚀刻配方来实现侧壁粗糙度的减小。通过SEM横截面图片的定性方法证实了这一点。

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