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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >Resist Re-flow Process for Trench Shrink in Dual Damascene
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Resist Re-flow Process for Trench Shrink in Dual Damascene

机译：双重镶嵌中的沟槽收缩抗回流工艺

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摘要

In an attempt to push the capabilities of 248nm patterning tool down to sub 130 nm structures, the resist reflow method was used to shrink trench structures. In this method patterned resist structures were encapsulated in a new material supplied by Clariant USA using a coat process. Resist reflow was subsequently reflowed using bake process to shrink the critical dimension (CD) of the patterned structures. Different pitches that varied from a dense (11) to semi-isolated (1:5) and fully isolated were studied in this process. The effect of time and temperature of the bake process on CD shrink was investigated. It was observed that the amount of shrink was dependent on both the temperature and time. Increasing either of the two resulted in a smaller CD. A shrink of 20 to 75 nm was achieved based on the time and temperature of processing. However, at very high temperatures (>170℃), the pattern fidelity was lost. Scanning electron microscope (SEM) cross sections taken for semi isolated and isolated trenches showed acceptable profiles. Lastly, the process was successfully applied to a dual damascene structure pattening. Although this process is not applicable for generating small features with dense (1:1) pitch, but this method shows promise for generating small geometries with larger pitch.
机译：为了将248nm构图工具的功能降低到130nm以下，使用了抗蚀剂回流法来缩小沟槽结构。在这种方法中，将图案化的抗蚀剂结构封装在由科莱恩美国公司提供的新材料中，采用涂覆工艺。随后使用烘烤工艺对抗蚀剂回流进行回流，以缩小图案化结构的临界尺寸（CD）。在此过程中，研究了从密集（11）到半隔离（1：5）到完全隔离的不同音高。研究了烘烤过程的时间和温度对CD收缩的影响。观察到收缩量取决于温度和时间。两者中任一个的增加都会导致CD减小。基于处理的时间和温度，实现了20至75 nm的收缩。但是，在非常高的温度（> 170℃）下，图案的保真度丧失了。半隔离和隔离沟槽的扫描电子显微镜（SEM）横截面显示出可接受的轮廓。最后，该工艺成功应用于双重镶嵌结构的拼花。虽然此过程不适用于生成具有密集（1：1）间距的小特征，但是此方法显示了生成具有较大间距的小几何体的希望。

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