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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >New planarization method assisted by aggregated particle created with optical radiation pressure
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New planarization method assisted by aggregated particle created with optical radiation pressure

机译：由光辐射压力产生的聚集粒子辅助的新型平面化方法

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摘要

A new planarization method was attempted to improve the planarity on SiO_2 film. The planarization method has two processes. One is to form the aggregated marks aiming the recessed areas on silicon wafer surface, based on the optical radiation pressure by laser irradiation. The aggregated marks consist of fine particles of silica in slurry, and are fixed firmly on surface of silicon wafer. The other is to polish the surface of silicon wafer, in order to make planarization. In the polishing process, the aggregated marks work to control material removal as a mask, which results in selective material removal process on projected areas. Based on the fundamental concept of planarization, experiments were attempted on the test pieces which had trenched-shape formed with FIB machining, and the planarized surface was obtained.
机译：尝试了一种新的平坦化方法，以改善SiO_2薄膜的平坦性。平坦化方法具有两个过程。一种是基于通过激光照射的光辐射压力形成瞄准硅晶片表面上的凹陷区域的聚集标记。聚集的痕迹由浆料中的二氧化硅细颗粒组成，并牢固地固定在硅片的表面上。另一种是抛光硅晶片的表面，以使其平坦化。在抛光过程中，聚集的标记可作为掩模来控制材料的去除，从而在投影区域上进行选择性的材料去除过程。基于平面化的基本概念，对通过FIB加工形成沟槽形状的试件进行了实验，获得了平面化的表面。

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