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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >CRITICAL ISSUES IN THE INTEGRATION OF COPPER - BLACK DIAMOND INTERCONNECTS
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CRITICAL ISSUES IN THE INTEGRATION OF COPPER - BLACK DIAMOND INTERCONNECTS

机译：铜-黑钻石互连件集成中的关键问题

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In this study, critical issues in single and dual damascene Cu/Balck )iamond (BD) backend processes in 0.13 μm technology node are evaluated. Patterning was performed using attenuated phase shift mask with 248 nm lithography. 99% yield was obtained from single damascene 0.18 μm Ml Cu lines. No hardmask was applied so that CMP directly polished BD top layer. Therefore, the high yield reflects the low defects count generated on BD by CMP. Side lobes and resist poisoning were found in trench 2 patterning which were independent of the filmstack in inter-metal dielectric (IMD2). Side lobes are inevitable while using attenuated phase shift masks. They connected trenches and provided an easy path for current flow to result in zero resistance for all vias in via chain with minimum overlap (VCM) with pitch 1:2 in integration scheme without USG hardmask. But 99% yield in VCM was achieved by applying USG hardmask against 2% yield without hardmask. Resist poisoning in 248 nm node photoresist is usually due to amine evolution from open vias in a 'via first' dual damascene scheme. It could not be avoided by choosing different filmstack. However, it was eliminated by using a new photoresist (PR2). In VCM with 1:3 and 1:4 pitches yield improvement from 30% to 70% was obtained by applying PR2 confirming that there was no resist poisoning with PR2 in isolated trenches that were more prone to poisoning.
机译：在这项研究中，评估了在0.13μm技术节点中的单和双镶嵌Cu / Balck）金刚石（BD）后端工艺中的关键问题。使用具有248 nm光刻技术的衰减相移掩模进行构图。从单镶嵌0.18μmM1 Cu线获得99％的产率。没有应用硬掩模，使得CMP直接抛光BD顶层。因此，高成品率反映了CMP在BD上产生的缺陷数量少。在沟槽2的图形中发现了旁瓣和抗蚀剂中毒，与金属间电介质（IMD2）中的膜叠层无关。当使用衰减相移掩模时，旁瓣是不可避免的。他们连接了沟槽，并为电流提供了一条简单的路径，以在没有USG硬掩模的集成方案中，以最小重叠（VCM）和间距为1：2的通孔链中的所有通孔实现零电阻。但是，通过应用USG硬掩膜可实现VCM的99％成品率，而无硬掩膜的成品率为2％。 248 nm节点光刻胶中的抗蚀剂中毒通常是由于胺从“先通孔”双镶嵌方案中的开放通孔逸出。选择不同的胶卷不能避免这种情况。但是，通过使用新的光刻胶（PR2）消除了这种现象。在采用1：3和1：4间距的VCM中，通过应用PR2可以将良率从30％提高到70％，这证实了在更容易中毒的孤立沟槽中没有PR2引起的抗蚀剂中毒。

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