Study of Electro-CMP for Copper Damascene Process

机译：铜镶嵌工艺中电CMP的研究

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Electro-CMP(Chemical Mechanical Polishing) is newly developed for copper/Low-k damascene process in next generation. As regarding Electro-CMP, not orly mechanical and chemical effects but also electro-chemical effect operates on copper surface. Therefore it is possible to polish copper surface with less defects. In this study, fundamental characteristics of Electro-CMP were investigated with newly manufactured Electro-CMP tool. Finally, polishing mechanism on the Electro-CMP is examined using XPS (X-ray Photoelectron Spectroscopy) analysis.

机译：Electro-CMP（化学机械抛光）是下一代铜/低k镶嵌工艺的最新开发。关于电CMP，在铜表面上不仅作用机械和化学作用，而且作用化学作用。因此，可以以较少的缺陷抛光铜表面。在这项研究中，使用新制造的Electro-CMP工具研究了Electro-CMP的基本特性。最后，使用XPS（X射线光电子能谱）分析检查在CMP上的抛光机理。

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来源
《Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore》|2002年|p.431-434|共4页
会议地点 Singapore(SG);Singapore(SG)
作者
Takashi Fujita; Toshiroh K. Doy; Akira Isobe; Osamu Kinoshita;
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作者单位

Tokyo Seimitsu Co, Ltd., 2968-2 Ishikawa-machi Hachioji city Tokyo, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Study of Electro-CMP for Copper Damascene Process

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