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首页> 外文会议>Nineteenth International VLSI Multilevel Interconnection Conference (VMIC) Nov 19-20, 2002 Singapore >DIRECT STI CMP WITH CERIA BASED SLURRY FOR 90nm TECHNOLOGY
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DIRECT STI CMP WITH CERIA BASED SLURRY FOR 90nm TECHNOLOGY

机译：基于Ceria的浆液的直接STI CMP用于90nm技术

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摘要

As every manufacturing step is driven by the desire to achieve he lowest cost and the removal of non-value-added operations, direct polishing therefore becomes one of the attractive options for shallow trench isolation (STI) chemical mechanical planarization (CMP). Nitride thickness becomes more critical for gapfill in STI process due to high aspect ratio result from narrow and deep trench as features sizes become smaller and denser. In this paper it is reported the excellent planarization performance of direct STI-CMP process with ceria based high selectivity slurry (HSS) for 90 nm devices. It has achieved much better performance in nitride and trench oxide within wafer, within die uniformity, dishing in wide and narrow trench, isolated structure protection, over-polishing resistance and process control capability, compared to reverse mask process with conventional silica based slurry. The improved performance in STI elevation variation and E-test results is presented in this paper as well. To save the cost of ceria based slurry it is developed a dual slurry process, which uses low cost silica based slurry for first step bulk polishing and expensive ceria based slurry for second step. Compared to ceria based HSS only process, the cost of consumables can be reduced by 30% and the similar good performance can be achieved.
机译：由于每个制造步骤都是由实现最低成本和取消非增值操作的愿望所驱动的，因此，直接抛光成为浅沟槽隔离（STI）化学机械平面化（CMP）的有吸引力的选择之一。氮化物厚度对于STI工艺中的间隙填充而言变得更加关键，这是因为随着尺寸变小和变密，窄而深的沟槽导致了高深宽比。本文报道了使用基于二氧化铈的高选择性浆料（HSS）的直接STI-CMP工艺对90 nm器件的优异平面化性能。与使用常规二氧化硅基浆料的反向掩膜工艺相比，它在晶圆内的氮化物和沟槽氧化物，芯片均匀性，宽窄沟槽中的凹陷，隔离的结构保护，抗过度抛光性和工艺控制能力方面具有更好的性能。本文还介绍了STI高程变化和E检验结果的改进性能。为了节省二氧化铈基浆料的成本，开发了一种双浆料工艺，该工艺将低成本的二氧化硅基浆料用于第一步批量抛光，而将昂贵的二氧化铈基浆料用于第二步。与仅基于二氧化铈的HSS工艺相比，耗材成本可降低30％，并且可以获得类似的良好性能。

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