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PULSED LASER ETCHING OF GaN AND AlN FILMS

机译：GaN和AlN薄膜的脉冲激光刻蚀

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摘要

Due to limited success in wet etching of GaN and AlN, dry etching techniques have become more relevant for the processing of the GaN films. Here we demonstrate the results of an alternative dry etching process, namely, pulsed laser etching, for GaN and AlN. In this method, a KrF pulsed excimer laser (λ,=248 nm, τ=30 ns) was used to etch epitaxial GaN and AlN films. The dependence of the etching characteristics on the laser energy density and the number of pulses has been studied. The etch depth showed a linear dependence on the number of pulses over a wide range of laser energy densities. The threshold intensity for GaN etching was determined to be 0.33 J/cm2. The etching rate was found to be a strong function of laser energy density. Above the threshold, the etch rate was found to be 300-1400 A per pulse leading to etching rates of 0.1-μm/sec depending upon the laser energy density and the pulse repetition rate. It is shown that the etching mechanism is based on laser induced absorption, decomposition and layer by layer removal of the GaN.
机译：由于在GaN和AlN的湿法刻蚀方面取得的成功有限，因此干法刻蚀技术对于GaN膜的加工变得越来越重要。在这里，我们演示了另一种干法蚀刻工艺的结果，即用于GaN和AlN的脉冲激光蚀刻。在这种方法中，使用KrF脉冲准分子激光器（λ= 248 nm，τ= 30 ns）蚀刻外延GaN和AlN膜。已经研究了蚀刻特性对激光能量密度和脉冲数的依赖性。蚀刻深度在很宽的激光能量密度范围内显示出与脉冲数的线性关系。 GaN蚀刻的阈值强度被确定为0.33J / cm 2。发现蚀刻速率是激光能量密度的强函数。高于阈值，根据激光能量密度和脉冲重复率，蚀刻速率为每个脉冲300-1400 A，导致蚀刻速率为0.1-μm/ sec。结果表明，腐蚀机理是基于激光诱导的GaN的吸收，分解和逐层去除。

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  • 来源
    《Nitride semiconductors》|1997年|1015-1020|共6页
  • 会议地点 Boston MA(US)
  • 作者

    H. Chen; R.D. Vispute; V. Talyansky; R. Enck; S.B. Ogale; T. Dahmas; S. Choopun; R.P. Sharma; T. Venkatesan; A.A. Iliadis; L.G. Salamanca-Riba; K. A. Jones;

  • 作者单位

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    also Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    CSR, Department of Physics, University of Maryland, College Park, MD 20742;

    also Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742;

    Department of Electrical E;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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