AGING OF InGaN/AlGaN/GaN LIGHT-EMITTING DIODES

机译：InGaN / AlGaN / GaN发光二极管的老化

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Changes in luminescent spectra, current-voltage, and capacitance-voltage characteristics were studied versus time of working at forward currents for light-emitting diodes based on InGaN/AlGaN/GaN heterostructures. The samples of blue and green LEDs with a single quantum well InGaN active layers were studied during 10~2-2.10~3 hours at currents 30-80 mA. An increase in efficiency at the first stage and a decrease one at the second stage were detected. The mAlN changes were detected at low currents in blue diodes for tunnel components of current and radiation. Activation of acceptors Mg because of residual H atoms are going out of complexes Mg-H and creation of donor type defects are proposed as models for two stages. A model of injection stimulated (non-thermal) underthreshold creation of defects can explAlN the results.

机译：研究了基于InGaN / AlGaN / GaN异质结构的发光二极管的发光光谱，电流-电压和电容-电压特性随正向电流工作时间的变化。在10〜2-2.10〜3个小时内，以30-80 mA的电流研究了具有单量子阱InGaN有源层的蓝色和绿色LED的样品。检测到第一阶段效率提高，第二阶段效率下降。在低电流下，在蓝色二极管中检测到了电流和辐射的隧道分量中的mAlN变化。由于残留的H原子激活了受体Mg，使它们脱离了配合物Mg-H，建议将供体型缺陷的产生作为两个阶段的模型。注射激发（非热）阈值以下缺陷的产生的模型可以解释结果。

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《Nitride semiconductors》|1997年|1041-1046|共6页
会议地点 Boston MA(US)
作者
A.E.YUNOVICH; A.N.KOVALEV; V.E.KUDRYASHOV; F.I.MANYAKHIN; A.N.TURKIN;
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Moscow State Lomonosov University, Department of Physics, 119899 Moscow Russia;

Moscow Institute of Steel and Alloys, Leninski Prosp.4,119235 Moscow Russia;

Moscow State Lomonosov University, Department of Physics, 119899 Moscow Russia;

Moscow Institute of Steel and Alloys, Leninski Prosp.4,119235 Moscow Russia;

Moscow State Lomonosov University, Department of Physics, 119899 Moscow Russia;

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1. Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode [J] . Min Guo, Zhi-You Guo, Jing Huang, 中国物理：英文版 . 2017,第002期

机译：基于GaN / InGaN / AlGaN / InGaN / GaN的梯度成分的InGaN基蓝色发光二极管的载流子分布改善
2. Performance Enhancement of Blue InGaN Light-Emitting Diodes with P-GaN/InGaN SPS Last Barrier and P-AlGaN/GaN SPS EBL [J] . Wang C. K., Chiou Y. Z., Lin P. K., ECS Journal of Solid State Science and Technology . 2016,第6期

机译：P-GaN / InGaN SPS的最后一个势垒和P-AlGaN / GaN SPS EBL增强了蓝色InGaN发光二极管的性能
3. High-Efficiency InGaN/GaN/AlGaN Light-Emitting Diodes with Short-Period InGaN/GaN Superlattice for 530-560 nm Range [J] . Lundin W.V., Nikolaev A.E., Sakharov A.V., Technical physics letters: Letters to the Russian journal of applied physics . 2010,第11期

机译：具有530-560 nm范围的短周期InGaN / GaN超晶格的高效InGaN / GaN / AlGaN发光二极管
4. 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes [C] . Chang S.J., Kuo C.H., Su Y.K., Management of Design Quality Assurance . 1988

机译：400nm InGaN / GaN和InGaN / AlGaN多量子阱发光二极管
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes [O] . Hongpo Hu, Shengjun Zhou, Xingtong Liu, -1

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7. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer [O] . Ju, Z. G., Liu, W., Zhang, Z. H., 2014

机译：具有AlGaN / GaN / AlGaN量子阱结构的电子阻挡层的蓝色InGaN / GaN发光二极管的优势
8. Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes [R] . Helms, C. J. , Berg, N. H. , Barton, D. L. , 1996

机译：Nichia alGaN / InGaN / GaN蓝色发光二极管的寿命试验

AGING OF InGaN/AlGaN/GaN LIGHT-EMITTING DIODES

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