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LOCATION OF RESIDUAL DONORS IN GaN EPITAXIAL LAYERS

机译:GaN外延层中残余供体的位置

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摘要

Optically-detected electron-nuclear double resonance (ODENDOR) studies at 24 GHz on high-resistivity GaN films grown on Al_2O_3 have been combined with x-ray diffraction measurements to obtain information on the location of the residual shallow donors. Strong ODENDOR assigned to ~(69,71)Ga lattice nuclei was detected on the g= 1.951 effective-mass donor resonance found on the 2.2 eV emission bands. The x-ray studies reveal that the layers are under biaxial compression with high values of strain (~ 2-3 × 10~(-3)). The quadrupole splittings for ~(69)Ga are smaller than those reported for strain-free samples by 15-25 %. The dominant sources of the local electric field gradient (EFG) responsible for the splittings are attributed to the wurtzite crystal structure and the strain fields that arise from the lattice constant mismatch and the difference in thermal expansion coefficients. An EFG/strain relationship of 3 × 10~(22) Vm~(-2) per unit strain at the ~(69,71)Ga nuclei is deduced. The ODENDOR can be described with asymmetry parameter η=0. This provides evidence that the donors are in the crystallites rather than near grain boundaries.
机译:将在Al_2O_3上生长的高电阻GaN膜在24 GHz上进行光学检测的电子核双共振(ODENDOR)研究与X射线衍射测量结合起来,以获得有关残余浅施主位置的信息。在2.2 eV发射谱带上,在g = 1.951的有效质量供体共振上检测到分配给〜(69,71)Ga晶格核的强ODENDOR。 X射线研究表明,这些层在双轴压缩下具有较高的应变值(约2-3×10〜(-3))。 〜(69)Ga的四极分裂比无应变样品的四极分裂小15-25%。负责分裂的局部电场梯度(EFG)的主要来源归因于纤锌矿晶体结构和由晶格常数失配和热膨胀系数差异引起的应变场。推论出〜(69,71)Ga原子核每单位应变的EFG /应变关系为3×10〜(22)Vm〜(-2)。可以用不对称参数η= 0描述ODENDOR。这提供了供体在微晶中而不是在晶界附近的证据。

著录项

  • 来源
    《Nitride semiconductors》|1997年|561-566|共6页
  • 会议地点 Boston MA(US)
  • 作者单位

    Naval Research Laboratory, Washington, D.C. 20375-5347;

    Naval Research Laboratory, Washington, D.C. 20375-5347;

    Naval Research Laboratory, Washington, D.C. 20375-5347;

    Naval Research Laboratory, Washington, D.C. 20375-5347;

    Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907;

    Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907;

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  • 正文语种 eng
  • 中图分类 材料;
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