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NEW METHOD OF COMPUTING BAND OFFSETS AND ITS APPLICATION TO AlGaN/GaN HETEROSTRUCTURES

机译：计算带隙的新方法及其在AlGaN / GaN异质结构中的应用

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Calculated sheet carrier concentration as a function of Al mole fraction in the quantum well (QW) formed at the GaN/AlGaN heterointerface is calculated and compared to experimental data. Close agreement between experiment and theory is observed. The calculated sheet carrier concentration reflects the maximum carrier concentration possible in the GaN QW for a given Al mole fraction and can not be used to argue in favor of either interface charge or piezoelectric effect as giving rise to the carriers. Based on experimental data the charge density in the AlGaNrnlayer is estimated to be 4 × 10~(12)cm~(-2).rnThe calculations are based upon a simple technique to determine valence band alignments. Calculated values are compared to experimental data showing excellent agreement. A calculated valence band discontinuity of 0.42eV for AlN/GaN is well within the experimental bounds.

机译：计算了在GaN / AlGaN异质界面处形成的量子阱（QW）中片载流子浓度随Al摩尔分数变化的函数，并将其与实验数据进行了比较。观察到实验和理论之间的紧密一致性。对于给定的Al摩尔分数，计算出的薄层载流子浓度反映了GaN QW中可能的最大载流子浓度，并且不能用来主张界面电荷或压电效应会产生载流子。根据实验数据，AlGaN层中的电荷密度估计为4×10〜（12）cm〜（-2）。计算基于确定价带取向的简单技术。将计算值与显示极佳一致性的实验数据进行比较。计算出的AlN / GaN的价带不连续性为0.42eV，完全在实验范围之内。

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来源
《Nitride semiconductors》|1997年|929-934|共6页
会议地点 Boston MA(US)
作者
Richard T. Webster; A. F. M. Anwar;
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作者单位

Air Force Research Laboratory, Hanscom AFB, MA 01730;

Electrical and Systems Engineering Department, University of Connecticut, Storrs, CT 06269;

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原文格式 PDF
正文语种 eng
中图分类材料;
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2. Investigation into the carrier distribution and energy-band profile in AlGaN/GaN heterostructures with a graded AlGaN buffer [J] . Han Tiecheng, Zhao Hongdong, Han Liying, Semiconductor science and technology . 2018,第11期

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3. Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures [J] . Wen Bo, Jiang Ruo-Lian, Zhou Jian-Jun, Chinese physics letters . 2004,第4期

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NEW METHOD OF COMPUTING BAND OFFSETS AND ITS APPLICATION TO AlGaN/GaN HETEROSTRUCTURES

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