DEEP TRAP CHARACTERIZATION IN GaN USING THERMAL AND OPTICAL ADMITTANCE SPECTROSCOPY

著录项

• 来源
  《Nitride semiconductors》|1997年|887-892|共6页
• 会议地点 Boston MA(US)
• 作者

  A. KRTSCHIL; H. WITTE; M. LISKER; J. CHRISTEN; U. BIRKLE; S. EINFELDT; D. HOMMEL; M. TOPF; B. K. MEYER;

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• 作者单位

  Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;

  Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;

  Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;

  Institute of Experimental Physics, University of Magdeburg, PO Box 4120, 39016 Magdeburg;

  Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;

  Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;

  Institute of Solid State Physics, University of Bremen, PO Box 330440, 28334 Bremen;

  1. Institute of Physics, University of Giessen, Heinrich Buff Ring 16, 35392 Giessen;

  1. Institute of Physics, University of Giessen, Heinrich Buff Ring 16, 35392 Giessen;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 材料;
• 关键词