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A KINETIC MODEL FOR GaN GROWTH

机译：GaN生长的动力学模型

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摘要

A kinetic model is presented to explain GaN growth. The model is based on established values for the N and Ga desorption kinetics and well founded assumptions on the adsorption and decomposition of the N and Ga containing precursors. When grown on similar nucleation layers, it is shown that high quality GaN films are achieved when the V/III ratio is chosen to be slightly larger than the Ga and N desorption rates. The model is verified by comparing the structural, optical, and electrical properties of the GaN to the growth temperature and V/III ratio. The model explains several features of GaN growth including, growth conditions for smooth surface morphology, growth conditions for highly resistive GaN, and a possible explanation for the origin of Ga and N vacancies in GaN. Based on the growth model, ordering of the GaN during growth is achieved via an adsorption/desorption cycle where Ga and N containing species are exchanged between the gas phase boundary layer and the solid surface. Consequences of the model on establishing growth conditions and run-to-run reproducability are also discussed.
机译：提出了动力学模型来解释GaN的生长。该模型基于N和Ga解吸动力学的既定值以及关于含N和Ga的前体的吸附和分解的良好假设。当在相似的成核层上生长时，表明当选择V / III比略大于Ga和N解吸速率时，可以获得高质量的GaN膜。通过比较GaN的结构，光学和电学性质与生长温度和V / III比来验证该模型。该模型解释了GaN生长的几个特征，包括光滑表面形态的生长条件，高电阻GaN的生长条件以及GaN中Ga和N空位的起源的可能解释。基于生长模型，通过吸附/解吸循环可实现GaN在生长过程中的有序化，在该吸附/解吸循环中，含Ga和N的物质在气相边界层和固体表面之间交换。还讨论了建立生长条件和运行间可复制性模型的后果。

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  • 来源
    《Nitride semiconductors》|1997年|167-172|共6页
  • 会议地点 Boston MA(US)
  • 作者

    D.D. KOLESKE; A.E. WICKENDEN; R.L. HENRY; W.J. DESISTO; R.J. GORMAN;

  • 作者单位

    Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375;

    Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375;

    Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375;

    Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375;

    Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375;

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  • 正文语种 eng
  • 中图分类 材料;
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