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A TEM STUDY OF THE MICROSTRUCTURAL EVOLUTION OF MBE-GROWN GaN

机译：MBE生长GaN的微观结构演变的TEM研究

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摘要

The evolution of the microstructure of GaN grown by molecular beam epitaxy on {001} and {111} oriented GaAs substrates has been followed using transmission electron microscopy and reflection high energy electron diffraction. A thin layer of GaN has been shown to form during the nitridation of the GaAs surface prior to growth. Growth of GaN then proceeds by an island mechanism. Faulting on the four {111} planes of the cubic zinc-blende phase which grows on the {001} surface occurs at an early stage as a consequence of misfit strain. The distribution of the {111} microtwins is initially isotropic, but growth of one pair of {111} twins proceeds much faster than that of the other pair, leading to a final microstructure which has an anisotropic distribution of microtwins. Doping of GaN with Si hinders the growth of the zinc-blende phase, leading to a textured, columnar (0001) wurtzite microstructure. Evidence is presented to show that addition of Mg as a dopant may reduce the stacking fault energy of wurtzite GaN.
机译：使用透射电子显微镜和反射高能电子衍射，追踪了分子束外延在{001}和{111}取向的GaAs衬底上生长的GaN的微观结构的演变。已经显示出在生长之前在GaAs表面氮化期间会形成GaN薄层。然后，通过岛机制进行GaN的生长。由于失配应变的结果，在{001}表面上生长的立方-闪锌矿相的四个{111}平面上的断层在早期出现。 {111}微孪晶的分布起初是各向同性的，但是一对{111}孪晶的生长比另一对孪晶的生长快得多，从而导致最终的微结构具有微孪晶的各向异性分布。用Si掺杂GaN会阻碍闪锌矿相的生长，从而导致织构的柱状（0001）纤锌矿微结构。证据表明，添加Mg作为掺杂剂可以减少纤锌矿GaN的堆垛层错能。

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  • 来源
    《Nitride semiconductors》|1997年|87-92|共6页
  • 会议地点 Boston MA(US)
  • 作者

    David M. Tricker; Paul D. Brown; Graeme Martin; J. Lu; D. I. Westwood; P. Hill; L. Haworth; J. E. Macdonald; T. S. Cheng; C. T. Foxon; Colin J. Humphreys;

  • 作者单位

    Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK;

    Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK;

    Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, UK;

    Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK;

    Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK;

    Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK;

    Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK;

    Department of Physics and Astronomy, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, UK;

    Department of Physics, Universi;

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  • 正文语种 eng
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