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Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC

机译：蓝宝石和6H-SiC表面GaN表面重建的扫描隧道显微镜观察

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We report studies of the surface structure of MBE-grown GaN layers on sapphire (0001) and 6H-(0001) SiC substrates. A different set of reconstructions is observed for nitrogen-face and gallium-face layers. The gallium-face has so far only been grown on MOCVD GaN/ sapphire substrates, while the nitrogen-face has been obtained on SiC and bare sapphire substrates.

机译：我们报告了在蓝宝石（0001）和6H-（0001）SiC衬底上MBE生长的GaN层的表面结构的研究。对于氮面层和镓面层，观察到一组不同的重构。到目前为止，镓面仅在MOCVD GaN /蓝宝石衬底上生长，而氮面在SiC和裸蓝宝石衬底上获得。

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《Nitride semiconductors》|1997年|363-368|共6页
会议地点 Boston MA(US)
作者
A.R. Smith; V. Ramachandran; R.M. Feenstra; D.W. Greve; J. Neugebauer; J.E. Northrup; M. Shin; M. Skowronski;
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Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213;

Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213;

Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213;

Department of Electrical and Computer Engineering, Carnegie Mellon University;

Fritz-Haber Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D14195 Berlin, Germany;

Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304;

Department of Materials Science, Carnegie Mellon University;

Department of Materials Science, Carnegie Mellon University;

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1. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy [J] . Zhou J., Reddic JE., Sinha M., Applied Surface Science . 2002,第3a4期

机译：通过扫描隧道显微镜研究蓝宝石上MOCVD生长的GaN膜的表面形貌
2. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4X Reconstruction: Linear Gallium Tetramers? [J] . Hamad A. H. AL-Brithen, Rong Yang, Muhammad B. Haider, Physical review letters . 2005,第14期

机译：Zn-Blende GaN（001）本征4X重建的扫描隧道显微镜和表面模拟：线性镓四聚体？
3. Scanning tunneling microscopy study of Ag/Ge(111): observation of surface reconstruction transformations [J] . H.M. Zhang, R.I.G. Uhrberg Surface Science . 2003,第2a3期

机译：Ag / Ge（111）的扫描隧道显微镜研究：表面重建转变的观察
4. Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC [C] . Symposium on nitride semiconductors . 1998

机译：扫描隧道显微镜观察甘蓝对甘蓝和6H-SIC
5. Development of an ultra high vacuum scanning tunneling microscope. Scanning tunneling microscopy study of silicon(111) and germanium(111) surfaces etching under bromine exposure [D] . Fouchier, Marc 2000

机译：超高真空扫描隧道显微镜的开发。溴暴露下硅（111）和锗（111）表面蚀刻的扫描隧道显微镜研究
6. Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations [O] . Andrea Resta, Thomas Leoni, Clemens Barth, -1

机译：Ag（111）上生长的硅层的原子结构：扫描隧道显微镜和非接触式原子力显微镜观察。
7. Solid Phase Epitaxy on Si Surfaces Studied by Scanning Tunneling Microscopy. Scanning-Tunneling-Microscopy Observations of Ge Solid-Phase Epitaxy on Si(111). [O] . Hiroki HIBINO, Toshio OGINO 1995

机译：通过扫描隧穿显微镜研究的Si表面上的固相外延。扫描 - 隧道显微镜观察Ge固相外延对Si（111）。

Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC

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