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首页> 外文会议>Nitride semiconductors >RECENT PROGRESS IN IMPLANTATION AND ANNEALING OF GaN AND AlGaN
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RECENT PROGRESS IN IMPLANTATION AND ANNEALING OF GaN AND AlGaN

机译：GaN和AlGaN的注入和退火研究进展

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摘要

Heterostructure modulation doped transistors (MODFETs) based on AlGaN/GaN structures have demonstrated impressive DC and microwave performance often despite high transistor access resistance. One approach to reducing the access resistance is to use selective area Si-implantation. While several reports exist on Si-implantation in GaN, little work has been done on implantation in AlGaN. In addition, more information on the annealing of implantation damage in GaN is needed to optimize its use in FETs and thyristors.rnWe report the electrical and structural properties of Si-implanted Al_(0.15)Ga_(0.85)N based on Hall measurements and Rutherford Backscattering (RBS) spectra, respectively. Al_(0.15)Ga_(0.85)N shows less damage accumulation than GaN for a room temperature Si-implant dose of 5×10~(15) cm~(-2) based on the minimum channeling yield (26% for AlGaN as compared to 34% for GaN), however, as with GaN, this damage is difficult to remove by thermal annealing at-1100 ℃.rnWe also report on high pressure (up to 15 kbar) and high temperature (up to 1500 ℃) annealing for Si-implanted GaN. At 1250 ℃ -50% electrical activation is achieved whichrnincreases to -90% at 1500 ℃. The photoluminescence of these samples is also restored, or even enhanced, by the high temperature treatments. Furthermore, RBS demonstrates that complete removal of the implantation induced damage is achieved for the 1500 ℃ anneal.
机译：尽管具有较高的晶体管访问电阻，但基于AlGaN / GaN结构的异质结构调制掺杂晶体管（MODFET）经常表现出令人印象深刻的DC和微波性能。降低访问阻力的一种方法是使用选择性区域Si注入。尽管已有关于GaN中Si注入的报道，但有关在AlGaN中进行注入的工作却很少。此外，需要更多有关GaN注入损伤退火的信息，以优化其在FET和晶闸管中的使用.rn我们基于霍尔测量和Rutherford报告了硅注入的Al_（0.15）Ga_（0.85）N的电和结构性质背向散射（RBS）光谱。基于最小沟道产量（基于AlGaN的26％，Al_（0.15）Ga_（0.85）N的室温Si注入剂量为5×10〜（15）cm〜（-2）时，损伤累积比GaN少）对于GaN高达34％），但是，与GaN一样，这种损坏很难通过在1100℃下进行热退火来消除。rn我们还报道了在1100℃下进行高压（最高15 kbar）和高温（最高1500℃）退火硅注入的GaN。在1250℃时达到-50％的电活化，在1500℃时增加到-90％。这些样品的光致发光还通过高温处理得以恢复，甚至得到增强。此外，RBS证明对于1500℃退火，可以完全消除注入引起的损伤。

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  • 来源
    《Nitride semiconductors》|1997年|979-984|共6页
  • 会议地点 Boston MA(US)
  • 作者

    J. C. ZOLPER; J. HAN; S. B. VAN DEUSEN; M. H. CRAWFORD; R. M. BIEFELD; J. JUN; T. SUSKI; J. M. BARANOWSKI; S. J. PEARTON;

  • 作者单位

    Office of Naval Research, Arlington, VA 22217;

    Sandia National Laboratories, Albuquerque, NM 87185-0603,;

    Sandia National Laboratories, Albuquerque, NM 87185-0603,;

    Sandia National Laboratories, Albuquerque, NM 87185-0603,;

    Sandia National Laboratories, Albuquerque, NM 87185-0603,;

    High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland;

    High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland;

    High Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland;

    University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611;

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  • 正文语种 eng
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