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PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF WURTZITE GaN(0001) SURFACES

机译：伍尔兹GaN（0001）表面电子结构的光致裂研究。

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The surface electronic structure of wurtzite GaN (0001) (1 × 1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N_2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H_2 and O_2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of sp_z character, consistent with a dangling bond state.

机译：纤锌矿型GaN（0001）（1×1）的表面电子结构已使用角分辨光发射光谱进行了研究。通过重复循环的N_2离子轰击和超高真空退火来清洁表面。清晰地观察到价带顶部以下的轮廓分明的表面状态。该状态对活化的H_2和O_2的吸附都很敏感，并且存在于价带最大值以下的预计体带隙中。该状态显示没有垂直或平行于表面的色散。该表面状态关于表面的镜面的对称性是均匀的，并且偏振测量表明它具有sp_z特性，与悬挂键状态一致。

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来源
《Nitride semiconductors》|1997年|787-792|共6页
会议地点 Boston MA(US)
作者
KEVIN E. SMITH; SARNJEET S. DHESI; CRISTIAN B. STAGARESCU; JAMES DOWNES; D. DOPPALAPUDI; THEODORE D. MOUSTAKAS;
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作者单位

Department of Physics, Boston University, Boston, MA 02215;

Department of Physics, Boston University, Boston, MA 02215;

Department of Physics, Boston University, Boston, MA 02215;

Department of Physics, Boston University, Boston, MA 02215;

Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215;

Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215;

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正文语种 eng
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1. New approaches for calculating absolute surface energies of wurtzite (0001 )/(0001): A study of ZnO and GaN [J] . Jingzhao Zhang, Yiou Zhang, Kinfai Tse, Journal of Applied Physics . 2016,第20期

机译：计算纤锌矿（0001）/（0001）的绝对表面能的新方法：ZnO和GaN的研究
2. Electronic Structure of Wurtzite- and Zinc Blende-GaN Studied by Angle-Resolved Photoemission [J] . TAKAHIRO MARUYAMA, YUTAKA MIYAJIMA, KAZUTAKA HATA Journal of Electronic Materials . 1998,第1a6期

机译：角分辨光发射研究纤锌矿和锌共混物-GaN的电子结构
3. Electronic Structure of Wurtzite- and Zinc Blende-GaN Studied by Angle-Resolved Photoemission [J] . TAKAHIRO MARUYAMA, YUTAKA MIYAJIMA, KAZUTAKA HATA Journal of Electronic Materials . 1998,第4期

机译：角分辨光发射研究纤锌矿和锌共混物-GaN的电子结构
4. PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF WURTZITE GaN(0001) SURFACES [C] . Symposium on nitride semiconductors . 1998

机译：卧零GaN（0001）表面的电子结构光学研究
5. Electronic Structure Characterization of Nanocrystalline Surfaces and Interfaces with Photoemission Spectroscopy. [D] . Gutmann, Sebastian. 2011

机译：纳米晶体表面和电子发射光谱的电子结构表征。
6. Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions [O] . Xueqiang Zhang, Sylwia Ptasinska -1

机译：H2O / GaN（0001）界面在环境条件下的电子和化学结构
7. Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN [O] . Zhang, Jingzhao, Zhang, Yiou, Tse, Kinfai, 2015

机译：从闪锌矿（111）/（ - 1-1-1）到纤锌矿的表面能计算（0001）/（000-1）：ZnO和GaN的研究
8. Band Bending and Photoemission-Induced Surface Photovoltages on Clean n- and p-GaN (0001) Surfaces. [R] . Long, J. P., Bermudez, V. M. 2002

机译：在清洁的n和p-GaN（0001）表面上的能带弯曲和光发射诱导的表面光伏。

PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF WURTZITE GaN(0001) SURFACES

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