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Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers

机译：热载流子扩散对InP量子点激光器中阈值电流的温度依赖性的影响

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The magnitude of the change in threshold current with temperature in InP quantum dot lasers caused by the distribution of carriers among dot states is quantified and demonstrated. Samples with differing distributions of allowed states, as assessed using absorption spectra and achieved by varying the composition of the quantum well above each layer of quantum dots, are affected differently by this thermal broadening although the underlying mechanism is the same. This difference is shown to be a result of different optical loss and the different gain magnitude achieved at a similar inversion level in the different samples. Uncoated, cleaved facet Fabry-Perot lasers with 2 mm long cavities are demonstrated with a threshold current density of 138 Acm~(-2) at 300 K that increases to 235 Acm~(-2) at 350 K (77℃).

机译：量化并证明了InP量子点激光器中由于载流子在点态之间的分布而导致的阈值电流随温度变化的幅度。使用吸收光谱评估并通过改变量子点每层上方的量子阱的组成而获得的具有不同允许态分布的样品，尽管其基本机理相同，但受此热展宽的影响不同。该差异被证明是由于不同的光损耗和在不同样本中以相似反转水平获得的不同增益幅度的结果。结果表明，具有2 mm长腔体的未镀膜切割面Fabry-Perot激光器在300 K时的阈值电流密度为138 Acm〜（-2），在350 K（77℃）时增加到235 Acm〜（-2）。

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来源
《Novel in-plane semiconductor lasers XIV》|2015年|93820F.1-93820F.7|共7页
会议地点 San Francisco CA(US)
作者
P. M. Smowton; S.N. Elliott; M. Kasim; A.B. Krysa;
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作者单位

School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, U.K.;

School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, U.K.;

School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, U.K.;

Dept of Electronic and Electrical Engineering, Sheffield University, Sheffield UK;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Quantum Dots; Semiconductor Lasers; Temperature Dependence; Semiconductor Devices;

机译：量子点;半导体激光器；温度依赖性；半导体器件;

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专利

1. Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers [J] . Smowton P. M., Elliott S. N., Shutts S., Selected Topics in Quantum Electronics, IEEE Journal of . 2011,第5期

机译：InP量子点激光器中与温度有关的阈值电流
2. Temperature dependence of threshold current for coupled multiple quantum‐well In1-xGax P1-zAsz‐InP heterostructure laser diodes [J] . Journal of Applied Physics . 1980,第5期

机译：耦合的多个量子阱In1-xGax P1-zAsz-InP异质结构激光二极管阈值电流的温度依赖性
3. 740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density [J] . Lutti J., Smowton P.M., Lewis G.M., Electronics Letters . 2005,第5期

机译：190 nm / sup -2 /室温阈值电流密度的740 nm InP / GaInP量子点激光器
4. Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers [C] . P. M. Smowton, S.N. Elliott, M. Kasim, Conference on novel in-plane semiconductor lasers XIV . 2015

机译：热载波扩展对INP量子点激光器阈值电流温度依赖性的影响
5. Characteristics of ultralow threshold quantum dot lasers using indium-arsenide/indium-gallium arsenide dots-in-a-well structures. [D] . Liu, Guangtian. 2000

机译：使用阱中砷化铟/砷化铟镓镓结构的超低阈值量子点激光器的特性。
6. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures [O] . Wojciech Rudno-Rudziński, Marcin Syperek, Janusz Andrzejewski, -1

机译：载流子传输效率及其对电信波长基于InP的量子点-量子阱结构的发射特性的影响
7. Reducing Thermal Carrier Spreading in InP Quantum Dot Lasers [O] . Makarimi Kasim, Stella N. Elliott, Andrey B. Krysa, 2015

机译：减少INP量子点激光器中的热载波

Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers

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