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首页> 外文会议>Novel in-plane semiconductor lasers XIV >New approach for high peak power lasing based on epitaxially-integrated AlGaAs/GaAs laser-thyristor heterostructure
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New approach for high peak power lasing based on epitaxially-integrated AlGaAs/GaAs laser-thyristor heterostructure

机译：基于外延集成AlGaAs / GaAs激光晶闸管异质结构的高峰值功率激射新方法

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A new approach to generation of high optical peak power by epitaxially and functionally integrated high-speed high-power current switch and laser heterostructure (so-called laser-thyristor) has been developed. This approach makes it possible to reduce the loss in external electrical connections, which is particularly important for the short-pulse high-amplitude current pumping. In addition, it considerably simplifies the fabrication technology of pulsed laser sources as a commercial product and allows stacking of multiple-element systems. The epitaxially integrated AlGaAs/GaAs heterostructure of low-voltage laser-thyristor has been studied and optimized for generation of high-power pulses at a 900-nm wavelength. It is shown that the incomplete switch-on of the laser-thyristor in the initial stage and the nonlinear dynamics of the emitted laser power are due to the insufficient efficiency of the vertical optical feedback in the epitaxially integrated heterostructure. Optimization of the composition and the interband absorption spectra of transistor base layers makes it possible to substantially raise the efficiency of control signals due to the rise in the photogeneration speed. Experimental laser-thyristor samples with a 200-μm aperture have been fabricated and studied. The maximum static blocking voltage does not exceed 20 V. It is shown that the generated laser pulses have a perfect bell-like shape without any indications of a nonlinear dynamics. This confirms that the changes introduced into the heterostructure design provide a sufficient efficiency of photogeneration of the control signal. As a result, the maximum optical peak power reaches 40 and 8 W at FWHM pulse durations of 95 and 13 ns, respectively. An analysis of the potential dynamics has shown that the heterostructure provides pumping of the active layer with up to 90-A pulses.
机译：已经开发了一种通过外延和功能集成的高速大功率电流开关和激光异质结构（所谓的激光晶闸管）产生高光峰值功率的新方法。这种方法可以减少外部电气连接的损耗，这对于短脉冲高振幅电流泵浦尤其重要。另外，它大大简化了脉冲激光源作为商业产品的制造技术，并允许堆叠多个元件的系统。研究和优化了低压激光晶闸管的外延集成AlGaAs / GaAs异质结构，以产生900 nm波长的高功率脉冲。结果表明，激光晶闸管在初始阶段的导通不完全以及所发射激光功率的非线性动力学是由于外延集成异质结构中垂直光反馈的效率不足所致。晶体管基极层的组成和带间吸收光谱的优化使得由于光生速度的提高而可以实质上提高控制信号的效率。制作并研究了孔径为200μm的实验性激光晶闸管样品。最大静态阻断电压不超过20V。表明产生的激光脉冲具有完美的钟形形状，没有任何非线性动力学迹象。这证实了引入异质结构设计的变化提供了控制信号的光生效率。结果，在95和13 ns的FWHM脉冲持续时间下，最大光学峰值功率分别达到40 W和8W。对电位动力学的分析表明，异质结构可为有源层提供高达90A的脉冲泵浦。

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