Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

机译：高K氧化物：硅界面中的原子结构，能带偏移和氢

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The bonding, electronic structure and valence band offsets are calculated for various atomic models of interfaces between Si and high dielectric constant insulators ZrO_2 and SrTiO_3. A non-polar face of the oxide does not necessarily give a semiconducting interface, because of the need to fill Si dangling bond states on the Si side. This can be achieved by stoichiometry changes. Band offsets of semiconducting interfaces are generally the same as those found from bulk charge neutrality levels, indicating no dipole layers. Dipole layers are present at some configurations, where the offset is then changed by up to 1 eV. The states of hydrogen in the oxides are also considered.

机译：计算了Si与高介电常数绝缘子ZrO_2和SrTiO_3之间界面的各种原子模型的键合，电子结构和价带偏移。氧化物的非极性面不一定必须具有半导体界面，因为需要在Si侧填充Si悬空键状态。这可以通过化学计量变化来实现。半导体界面的带偏移通常与从体电荷中性水平获得的带偏移相同，表明没有偶极层。偶极子层存在于某些配置中，然后偏移量最多可改变1 eV。还考虑了氧化物中氢的状态。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.289-301|共13页
会议地点 Boston MA(US);Boston MA(US)
作者
J Robertson; P W Peacock;
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作者单位

Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Atomic structure, band offsets, growth and defects at high-K oxide:Si interfaces [J] . J. Robertson, P.W. Peacock Microelectronic Engineering . 2004,第1a4期

机译：高K氧化物：Si界面的原子结构，能带偏移，生长和缺陷
2. Valence band offset at silicon/silicon nitride and silicon nitride/silicon oxide interfaces [J] . Vladimir A. Gritsenko, Alexandr V. Shaposhnikov, W.M. Kwok, Thin Solid Films . 2003,第1a2期

机译：硅/氮化硅和氮化硅/氧化硅界面的价带偏移
3. Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence band spectra [J] . L. Korte, R. Roessler, C. Pettenkofer Journal of Applied Physics . 2014,第20期

机译：通过X射线光电子能谱价带谱直接确定原子层沉积ZnO /氢化非晶硅异质结中的能带偏移
4. Atomic structure,band offsets and hydrogen in high K oxide:silicon interfaces [C] . J.Robertson, P.W.Peacock MRS Meeting . 2003

机译：高k氧化物中的原子结构，带偏移和氢气：硅界面
5. Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4Hydrigen-Silicon Carbide and their Effect on the Silicon Carbide/Silicon Dioxide Interface. [D] . Haney, Sarah Kay. 2012

机译：研究4H-碳化硅-碳化硅上低温原子沉积的氧化物及其对碳化硅/二氧化硅界面的影响。
6. Influence of Atomic Hydrogen Band Bending and Defects in the Top Few Nanometers of Hydrothermally Prepared Zinc Oxide Nanorods [O] . Mubarak J. Al-Saadi, Salim H. Al-Harthi, Htet H. Kyaw, 2017

机译：水热制备氧化锌纳米棒的前几纳米中原子氢能带弯曲和缺陷的影响
7. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiOx:H, 0 < x < 2) [O] . M. Liebhaber, M. Mews, T. F. Schulze, 2015

机译：晶体硅和非晶硅（亚）氧化物之间的异质结的价带偏移（A-SiOx：H，0
8. Atomic Structure of the Silicon/Silicon Dioxide Interface [R] . Mazur, J. H. 1985

机译：硅/二氧化硅界面的原子结构

Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces

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