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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy
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Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy

机译：生长温度对低温分子束外延生长硅深层的影响

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摘要

Deep-level transient spectroscopy (DLTS) measurements were performed on Si:Sb and Si:B n~+-p step junction diodes grown by LT-MBE at various growth temperatures. The trap density dependence on growth temperature decreases with increasing temperature. However, segregation and diffusion increase with increasing temperature. Electron traps, E1 (0.42-0.45eV) and E2 (0.257eV), and hole traps, H1 (0.38-0.41eV), were found in B-doped layer grown at 370℃, 420℃, 500℃, and 600℃. These traps have been characterized by their capture cross-section, activation energy level, and trap density. The origins of the dominating electron traps are hypothesized as the association with pure divacancy defects. El level can be assigned for singly negatively charged divacancy V(0/-) + α and E2 level for doubly negatively charged divacancy V(-2/-).
机译：在由LT-MBE在不同的生长温度下生长的Si：Sb和Si：B n〜+ -p阶跃结二极管上进行了深层瞬态光谱（DLTS）测量。陷阱密度对生长温度的依赖性随着温度的升高而降低。然而，偏析和扩散随着温度的升高而增加。在370℃，420℃，500℃和600℃生长的B掺杂层中发现电子陷阱E1（0.42-0.45eV）和E2（0.257eV）和空穴陷阱H1（0.38-0.41eV）。 。这些阱的特征在于其捕获截面，活化能级和阱密度。假设主要的电子陷阱的起源与纯空位缺陷有关。可以为单负电荷空位V（0 /-）+α指定E1级，为双负电荷空位V（-2 /-）指定E2级。

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