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Copper Diffusion Characteristics in Single Crystal and Polycrystalline TaN

机译：单晶和多晶TaN中的铜扩散特性

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TaN has become a very promising diffusion barrier material for Cu interconnections, due to the high thermal stability requirement and thickness limitation for next generation ULSI devices. TaN has a variety of phases and Cu diffusion characteristics vary with different phases and microstructures. We have investigated the diffusivity of copper in single-crystal (NaCl-structured) and polycrystalline TaN thin films grown by pulsed laser deposition. The polycrystalline TaN films were grown directly on Si(100), while the single crystal films were grown with TiN buffer layers. Both of poly and single-crystal films with Cu overlayers were annealed at 500℃, 600℃, 650℃, and 700℃ in vacuum to study the copper diffusion characteristics. The diffusion of copper into TaN was studied using STEM-Z contrast, where the contrast is proportional to Z~2 (atomic number), and TEM. The diffusion distances ((Dτ)~(1/2)) are found to be about 5nm at 650℃ for 30 min annealing. The diffusivity of Cu into single crystal TaN follows the relation D = (160 +- 9.5)exp[-(3.27 +- 0.1)eV/k_BT]cm~2s~(-1) in the temperature range of 600℃ to 700℃. We observe that Cu diffusion in polycrystalline TaN thin films is nonuniform with enhanced diffusivities along the grain boundary.
机译：由于对下一代ULSI器件的高热稳定性要求和厚度限制，TaN已成为非常有希望的用于Cu互连的扩散阻挡材料。 TaN具有多种相，并且Cu的扩散特性随不同的相和微观结构而变化。我们已经研究了铜在通过脉冲激光沉积法生长的单晶（NaCl结构）和多晶TaN薄膜中的扩散率。多晶TaN膜直接在Si（100）上生长，而单晶膜与TiN缓冲层一起生长。分别在500℃，600℃，650℃和700℃下对带有Cu覆盖层的多晶和单晶膜进行退火，以研究其铜扩散特性。使用STEM-Z对比研究了铜向TaN中的扩散，该对比与Z〜2（原子序数）和TEM成正比。发现在650℃下退火30分钟，扩散距离（（Dτ）〜（1/2））约为5nm。 Cu在单晶TaN中的扩散率在600℃至700℃温度范围内遵循D =（160 +-9.5）exp [-（3.27 +-0.1）eV / k_BT] cm〜2s〜（-1）的关系。我们观察到，多晶TaN薄膜中的Cu扩散是不均匀的，沿着晶界的扩散性增强。

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