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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Applications
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Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Applications

机译：使用肖特基二极管CV技术测量金属栅极CMOS应用中PVD TaN，TaSiN和TiSiN薄膜的功函数

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摘要

The metal gate process becomes a promising candidate for sub-65nm CMOS, due to the elimination of polysilicon depletion effects, and the possibility of adjusting the CMOS threshold voltage without more threshold implants. Our goal is to process mteal films with tunable work functions, in order to meet the demand of sub-65nm metal gate CMOS. PVD TaN films are deposited with various processing conditions. Auger analysis shows that by changing the nitrogen flow rate and the plasma power, the nitrogen content in the TaN films can be adjusted. In order to accurately determine the work function of these TaN materials, we have developed a Schottky Diode CV technique (or Metal-Silicon CV, or MS-CV). This approach not only improves the accuracy of the metal work function measurement, compared with the traditional MOS-CV technique (which is affected by the thickness and quality of the oxide), but also simplifies the fabrication. With the MS-CV's, we have successfully measured the work functions of Ni and Co, and compared the data with published references. The work function of PVD TaN actually decreases with higher nitrogen content, according to the Auger data and the MS-CV measurement, ranging from 3.42 ― 4.20 Volts. The MS-CV technique is shown to be independent to the size of the capacitors, and is little affected by the measurement frequency. By changing the frequency from 100KHz to 1MHz, the error in the work function is less than 50mV.
机译：由于消除了多晶硅耗尽效应，并且无需更多的阈值注入就可以调整CMOS阈值电压，因此金属栅极工艺成为65nm以下CMOS的有希望的候选者。我们的目标是加工具有可调功函数的金属膜，以满足低于65nm的金属栅CMOS的需求。 PVD TaN膜可在各种处理条件下沉积。俄歇分析表明，通过改变氮气流量和等离子功率，可以调节TaN膜中的氮含量。为了准确确定这些TaN材料的功函，我们开发了一种肖特基二极管CV技术（或金属-硅CV或MS-CV）。与传统的MOS-CV技术（受氧化物的厚度和质量影响）相比，该方法不仅提高了金属功函数的测量精度，而且简化了制造过程。使用MS-CV，我们已经成功地测量了Ni和Co的功函数，并将数据与公开的参考文献进行了比较。根据俄歇数据和MS-CV测量，PVD TaN的功函数实际上随着氮含量的增加而降低，范围为3.42到4.20伏。已显示MS-CV技术与电容器的尺寸无关，并且几乎不受测量频率的影响。通过将频率从100KHz更改为1MHz，功函数中的误差小于50mV。

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