METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE

• 1. 整合具有不同功函数的金属以形成具有高K栅极电介质及相关结构的互补金属氧化物半导体栅极的方法 [P] . 中国专利： CN1846305A . 2006-10-11
• 2. 一种双保险具有报警功能的金属防盗门的工作方法 [P] . 中国专利： CN109488176A . 2019-03-19
• 3. METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE [P] . SG119876A1 . 2006-03-28

  机译： 集成具有不同工作功能的金属以形成具有高k门介电和相关结构的CMOS门的方法

• 4. METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE [P] . 欧洲知识产权局专利： EP1661177A2 . 2006-05-31

  机译： 集成具有不同工作功能的金属以形成具有高k门介电和相关结构的CMOS门的方法

• 5. METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE [P] . 世界知识产权组织专利： WO2005048320A2 . 2005-05-26

  机译： 集成具有不同工作功能的金属以形成具有高k门介电和相关结构的CMOS门的方法

• 1. Improvement of metal gate/high-K dielectric CMOSFETs characteristics by atomic layer etching of high-K gate dielectric [J] . K.S. Min, C. Park, C.Y. Kang, Solid-State Electronics . 2013,第apra期
• 2. Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device [J] . Xu Qiuxia, Xu G., Zhou H., Solid-State Electronics . 2016,第JANaPTaA期
• 3. Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process [J] . Zhibo Zhang, S. C. Song, Craig Huffman Electrochemical and solid-state letters . 2005,第10期
• 4. Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric [C] . T. Pompl, H. C. Mogul, M. Kerber, . 2006
• 5. Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: Physics, reliability, and process development. [D] . Rhee, Se Jong. 2005
• 6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure [O] . Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, 2012
• 7. Hf-based high-K gate dielectric and metal gate stack for advanced CMOS devices [O] . JOO MOON SIG 2006

• 1. Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks [J] . Xinhua Zhu Jian-min Zhu Aidong Li Zhiguo Liu Naiben Ming . 材料科学技术：英文版 . 2009,第3期
• 2. Threshold Voltage Sensitivity to Metal Gate Work-Function Based Performance Evaluation of Double-Gate n-FinFET Structures for LSTP Technology [J] . M. Mustafa ,Tawseef A. Bhat ,M. R. Beigh . 纳米科学与工程（英文） . 2013,第1期
• 3. Magnetism and work function of Ni-Cu alloys as metal gates [J] . Cheng Yanming ,Zheng Yongping ,Huang Xu . 稀有金属：英文版 . 2012,第2期
• 4. One Step Positive Approach for Sheet Metal Forming Simulation Based on Quasi-conjugate-gradient Method [J] . NA Jingxin ,CHEN Wei . 中国机械工程学报 . 2013,第004期
• 5. Current Progress of Hf(Zr)-Based High-k Gate Dielectric Thin Films [J] . Gang HE Lide ZHANG . 材料科学技术：英文版 . 2007,第4期
• 6. RPL32-1和RPL32-2具有相同的核糖体功能但具有不同的超核糖体功能 [C] . 孙磊 ,杨枭伟 ,陈菲菲 . 纪念中国微生物学会成立六十周年大会暨2012年中国微生物学会学术年会 . 2012
• 7. CMOS集成电路门级平均功耗估算方法研究 [A] . 李跃平 . 2001