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首页> 外文会议>Novel Materials and Processes for Advanced CMOS >Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications
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Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications

机译：用于CMOS栅电极的化学气相沉积沉积的钌和氧化钌薄膜的特性

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This study describes work carried out to date involving evaluation of the chemical, structural, and electrical performance of ruthenium (Ru) and ruthenium oxide (RuO_2) films grown on SiO_2 substrates employing metal organic chemical vapor deposition (MOCVD). Diethyl ruthenocene and oxygen were employed as reactant gases for this work, which was carried out using a 200-mm wafer cluster tool. The films were characterized using cross-sectional scanning electron microscopy (CS-SEM), four-point resistance probe, x-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), and energy dispersive spectrometry (EDS). Capacitance-voltage (C-V) measurements were also carried out to assess the work function of the deposited films. It was determined that both Ru and RuO_2 phases possess near-bulk resistivity and low contamination levels. Importantly, it was observed that the film stoichiometry could be modulated by controlled changes of the processing conditions, and that pure Ru and RuO_2 films can be deposited in an oxygen ambient. In order to assess thermal stability, the films were subsequently annealed in forming gas and oxygen ambients, and it was found that the film stability is dependent upon both the deposited phase and the annealing ambient. Results of PMOS gate electrode performance testing of CVD Ru films, has been carried out, and the results are similar to those previously reported for ruthenium-based films.
机译：这项研究描述了迄今为止进行的工作，该工作涉及对使用金属有机化学气相沉积（MOCVD）在SiO_2衬底上生长的钌（Ru）和氧化钌（RuO_2）膜的化学，结构和电性能进行评估。使用二乙基钌茂金属和氧气作为反应气体进行这项工作，这是使用200毫米晶圆簇工具进行的。使用截面扫描电子显微镜（CS-SEM），四点电阻探针，X射线光电子能谱（XPS），卢瑟福背散射光谱（RBS），X射线衍射（XRD）和能量色散来表征薄膜光谱仪（EDS）。还进行了电容电压（C-V）测量，以评估沉积膜的功函。已确定Ru和RuO_2相均具有近体电阻率和低污染水平。重要的是，观察到可以通过控制加工条件的变化来调节膜的化学计量，并且可以在氧气环境中沉积纯Ru和RuO_2膜。为了评估热稳定性，随后将膜在形成气体和氧气的环境中退火，并且发现膜的稳定性取决于沉积相和退火环境。已经进行了CVD Ru膜的PMOS栅电极性能测试的结果，其结果与先前报道的基于钌的膜的结果相似。

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