HRTEM INVESTIGATION OF EFFECT OF VARIOUS RARE EARTH OXIDE DOPANTS ON EPITAXIAL ZIRCONIA HIGH-K GATE DIELECTRICS

机译：HRTEM研究各种稀土氧化物掺杂对表观氧化锆高K栅极介电常数的影响

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The effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO_2 interlayer growth of ZrQ_2 based gate dielectrics were examined. The width of the hysteresis window of La_2O_3 stabilized ZrQ_2 (LaSZ) gate dielectric was only 0,2V, on the other hands, that of Sc_2O_3 stabilized ZrQ_2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO_2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrQ_2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

机译：研究了几种稀土氧化物对基于ZrQ_2的栅介质的电容-电压（C-V）特性和SiO_2层间生长的影响。 La_2O_3稳定的ZrQ_2（LaSZ）栅极电介质的磁滞窗的宽度仅为0.2V，而Sc_2O_3稳定的ZrQ_2（ScSZ）栅极电介质的磁滞窗的宽度为1.4V。 HRTEM分析表明，RSZ（R = Sm，Nd，La）栅介质的SiO_2中间层的生长约为1nm，不到ScSZ的一半。这些结果表明掺有由较大离子半径阳离子组成的稀土氧化物的ZrQ_2栅极电介质的优点。

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来源
《Novel Materials and Processes for Advanced CMOS》|2002年|p.361-366|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Takanori Kiguchi; Naoki Wakiya; Kazuo Shinozaki; Nobuyasu Mizutani;
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作者单位

Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, Japan;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics [J] . Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Key Engineering Materials . 2003,第期

机译：C-V特性的改善和稀土氧化物稳定的氧化锆外延栅极电介质的层间生长控制
2. Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd_2O_3 as gate dielectric [J] . Gogoi P. Semiconductors . 2013,第3期

机译：以高k稀土氧化物Nd_2O_3为栅极电介质的热沉积Ag掺杂CdS薄膜晶体管
3. The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-k Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications [J] . Bongmook Lee, Steven R. Novak, Nivedita Biswas, Japanese journal of applied physics . 2012,第1ISSUE1期

机译：稀土金属对n沟道金属氧化物半导体器件应用中的全硅化栅极/高k电介质堆叠的有效功函数调制的作用
4. Hrtem investigation of effect of various rare earth oxide dopants on epitaxial zirconia high-k gate dielectrics [C] . Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Materials Research Society Symposium . 2003

机译：HRTEM调查各种稀土氧化掺杂剂对外延氧化锆高k栅极电介质的影响
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

机译：快速热CVD高k栅极电介质和CVD金属栅电极的技术开发和研究，用于未来的ULSI MOSFET器件集成：氧化锆和氧化ha。
6. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices [O] . Yi Zhao 2012

机译：高k和更稳定的稀土氧化物作为先进CMOS器件的栅极电介质的设计
7. Design of Higher-<em>k</em> and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices [O] . Yi Zhao 2012

机译：设计更高的＆lt; em＆gt; k＆lt; / em＆gt;更稳定的稀土氧化物作为高级CmOs器件的栅极电介质
8. Radiological and Nuclear Detection Material Science: Novel Rare-Earth Semiconductors for Solid-State Neutron Detectors and Thin High-k Dielectrics. [R] . Dowben, P., Belashchenko, K., Losovyj, Y., 2017

机译：放射性和核探测材料科学：用于固态中子探测器和薄高k电介质的新型稀土半导体。

HRTEM INVESTIGATION OF EFFECT OF VARIOUS RARE EARTH OXIDE DOPANTS ON EPITAXIAL ZIRCONIA HIGH-K GATE DIELECTRICS

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