首页> 外文会议>Optical components and materials IX. >Impact of threading dislocation density on metamorphic Insubx/subGasub1-x/subAs and Insubz/subGasub1-z/subP p-i-n photodetectors on GaAs

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Impact of threading dislocation density on metamorphic Insubx/subGasub1-x/subAs and Insubz/subGasub1-z/subP p-i-n photodetectors on GaAs

机译：螺纹位错密度对变质In _{x Ga _{1-x As和In _{z Ga _{1-z P的影响GaAs上的pin光电探测器}}}}

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Bandgap tunability achievable using metamorphic epitaxy enables maximization of photodetector performanceat target wavelengths. However, an increase in threading dislocation density (TDD), which is inherent for the growth ofrelaxed, lattice-mismatched lay

机译：使用变质外延可实现的带隙可调性使目标波长处的光电探测器性能最大化。但是，线错位密度（TDD）的增加是松弛的，晶格不匹配的层的生长所固有的

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来源
《Optical components and materials IX.》|2012年|P.1A.1-1A.8|共8页
会议地点 San Francisco CA(US)
作者
K. Swaminathan; T. J. Grassman; L.-M. Yang; D. Chmielewski; M. Mills; S. A. Ringel;
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作者单位

The Ohio State Univ. (United States);

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原文格式 PDF
正文语种 eng
中图分类 TB342;TB342;
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Impact of threading dislocation density on metamorphic Insubx/subGasub1-x/subAs and Insubz/subGasub1-z/subP p-i-n photodetectors on GaAs

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