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Reticle contributions to CD uniformity for 0.25-um DUV lithography

机译：0.25um DUV光刻的光罩对CD均匀性的贡献

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Abstract: The trend in the semiconductor industry is towards superior imaging performance requiring fundamentally tighter control of device Critical Dimensions (CD) and yield. This paper focuses on the analysis of reticle contributions to intrafield CD Uniformity for step and repeat 0.25 micrometer DUV Lithography. A method is described to subtract the reticle fingerprint contribution from the CD measurement data. The method demonstrated that CD Uniformity, in terms of 3$sigma@, is perhaps only a valid statically allowed estimate if it is used after reticle correction. The extensive intrafield CD uniformity evaluation was performed on a typical ASML PAS 5500/300 DUV stepper to determine the impact of various illumination conditions. For APEX-E2408 photoresist, the actual intrafield CD uniformity was 13 nm (3$sigma@) at best focus and 14 nm (3$sigma@) over a 0.6 micrometer focus range for 0.25 micrometer dense lines and annular illumination with a NA equals 0.54. Subtracting the reticle fingerprint yields the exposure tool CD component of 8 nm (3$sigma@) at best focus and 8 nm (3$sigma@) over a 0.6 micrometer focus range. This is smaller than the reticle CD error component of 10 nm (3$sigma@) which results from 32 nm (3$sigma@) mask CD uniformity and a reticle sensitivity factor of 1.3. It is, therefore, imperative to reduce the reticle CD influence to realize further resolution reductions in manufacturing. Subtracting the reticle CD non-uniformity contribution allows us more accurately to determine the lithographic tool contribution to the CD uniformity budget. !12
机译：摘要：半导体行业的趋势是朝着卓越的成像性能发展，要求从根本上严格控制器件的关键尺寸（CD）和良率。本文重点分析掩模版对步长和重复0.25微米DUV光刻技术对场内CD均匀性的贡献。描述了一种从CD测量数据中减去掩模版指纹贡献的方法。该方法表明，如果在掩模版校正后使用CD均匀性，就3 $ sigma @而言，它也许只是一个有效的静态允许估计。在典型的ASML PAS 5500/300 DUV步进器上进行了广泛的场内CD均匀性评估，以确定各种照明条件的影响。对于APEX-E2408光致抗蚀剂，在0.25微米密集线和0.6纳米聚焦范围内，在0.6微米聚焦范围内，实际场内CD均匀性在最佳聚焦下为13 nm（3 $ sigma @），在14 nm（3 $ sigma @）下，环形照明的NA等于0.54。减去分划板指纹后，曝光工具CD分量在最佳聚焦下为8 nm（3 $ sigma @），在0.6微米聚焦范围内为8 nm（3 $ sigma @）。这小于10 nm（3 $ sigma @）的标线片CD误差分量，后者是由32 nm（3 $ sigma @）的掩模CD均匀性和标线片灵敏度因子1.3引起的。因此，必须减小掩模版CD的影响以实现制造中的进一步分辨率降低。减去掩模版CD的非均匀性贡献，可以使我们更准确地确定光刻工具对CD均匀性预算的贡献。 ！12

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