Abstract: The phase shift mask (PSM) is a key emerging technology thought to be extending 248 nm lithography. In this paper, we describe the lithographic performances of Shipley UV5 photoresist on SiOxNy Bottom Anti Reflective coating (BARC), using alternating PSM and ASM/90 Deep-UV stepper. Results on 0.18 micrometer design rules are presented: lithographic performances, comparison between PSM and binary mask, sub 0.18 micrometer performances ($LFBC@1$RTBC@) and the ultimate resolution of this technology are reported. To conclude we demonstrated the 0.18 micrometer lithography feasibility with alternating mask and KrF stepper, and showed that all the necessary tools are today available to achieve such goals. !5
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