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Bottom-ARC optimization methodology for 0.25-um lithography and beyond

机译:适用于0.25um及以下光刻的Bottom-ARC优化方法

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Abstract: This paper reports on an optimization methodology for BARC/resist processes in order to obtain best CD-control on various substrate topographies. A selection of resist and BARC materials is studied by means of simulations and experiments. Two BARC properties, turned out to be of major importance: planarization effects on topography and etch behavior. The topography itself is very important too: step height and lateral dimensions have a severe influence on CD control. Based on a new evaluation technique, the use of topographical swing curves, the optimum thickness of the BARC layer and of the resist layer are determined. !7
机译:摘要:本文报告了一种用于BARC /抗蚀剂工艺的优化方法,以便在各种衬底形貌上获得最佳的CD控制。通过模拟和实验研究了抗蚀剂和BARC材料的选择。事实证明,BARC的两个特性非常重要:平面化对形貌和蚀刻行为的影响。地形本身也非常重要:台阶高度和横向尺寸对CD控制产生严重影响。基于一种新的评估技术,确定了地形变化曲线,BARC层和抗蚀剂层的最佳厚度。 !7

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