Abstract: KrF extendibility to 180 nm and 150 nm L/S patterns and optimized NA were investigated by simulation. Mask CD error and exposure dose error are very important factor in photo process of device manufacture. We took 2 level of expected mask quality and dose control. The mask CD error of plus or minus 15 nm and dose error of plus or minus 4% are very tight but possible level in near future, and plus or minus 10 nm and 3% as extremely tight level but expected to be achieved in sometime. 0.6 NA and quadrupole illumination (pole offset 0.75, diameter 0.1) shows 0.8 micrometer depth of focus (DOF) with mask CD error of plus or minus 15 nm and dose error of plus or minus 4% for 180 nm patterns and bigger in our simulation. This shows that the 0.6 NA KrF exposure tool could be applied to 180 nm devices with acceptable mask and dose errors, but there are still problems of illumination uniformity and throughput caused by extreme off axis condition. Including 150 nm pattern, only 0.7 NA shows 0.6 micrometer DOF with mask CD error of plus or minus 10 nm and dose error of plus or minus 3% which is extremely tight condition. !4
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机译：摘要：通过仿真研究了KrF在180 nm和150 nm L / S图案上的可扩展性以及优化的NA。掩模CD误差和曝光剂量误差是器件制造过程中非常重要的因素。我们采取了2个预期的口罩质量和剂量控制水平。面罩CD的正负15 nm误差和正负4％的剂量误差非常严格，但可能在不久的将来达到该水平，正负10 nm和3％作为极其严格的水平，但有望在某个时候实现。 0.6 NA和四极照明（极距0.75，直径0.1）显示0.8微米的焦深（DOF），对于180 nm图案，掩模CD误差为正负15 nm，剂量误差为正负4％，在我们的模拟中更大。这表明0.6 NA KrF曝光工具可以应用于具有可接受的掩模和剂量误差的180 nm器件，但是仍然存在由于极端离轴条件而导致的照明均匀性和生产量的问题。包括150 nm图案在内，只有0.7 NA可以显示0.6微米的自由度，掩模CD误差为正负10 nm，剂量误差为正负3％，这是非常严格的条件。 ！4
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