Abstract: A novel, accurate, one-dimensional process proximity correction method is proposed. The method is based on the relationship between a line width variation and the bias which should be corrected. This relationship is characterized by the Total process proximity-based Correction Factor (TCF) which is defined as the slope of the wafer CD variation curve to the mask design CD under a constant pattern pitch condition. At a TCF greater than 1, patterns should be corrected with values less than the line width deviation. By applying the new PPC method to 0.25 micrometer logic gate patterns, a correction rule table was experimentally obtained. The new PPC mask fabricated with the correction rule exhibited a significant improvement over the conventional correction technique in the logic device. !3
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