• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Optical Microlithography XIX pt.1 >OPC and Verification Accuracy Enhancement using the 2D Wafer Image for the Low k1 Memory Devices
【24h】

OPC and Verification Accuracy Enhancement using the 2D Wafer Image for the Low k1 Memory Devices

机译：低k1存储设备使用2D晶圆图像提高OPC和验证精度

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The most important task in the OPC (optical proximity correction) process is to make a model database which can simulate optical behavior, while the characterization of resist development is still performed empirically. The previous approaches to lithography model generation heavily rely on 1 dimensional CD (critical dimension) measurements containing hundreds of features representing different sizes, shapes and pitches. Despite the huge amount of experiment data, there still can be a significant model error due to mismatching between measurement points and simulation points in 2 dimensional structures such as line ends, contact, and corners. Since the large number of data is required, it is quite natural that there require a huge computational effort to get the model. Our approach in this paper is based on the fitting model with 2D images, i.e., SEM image or a rigorous simulation image. It would not be an overstatement to say that a 2D wafer image is worth thousands of CD measurements. This approach is able to cover the symmetric as well as the non-symmetric patterns and prevents the threshold level from an inappropriate swing at the CTR (constant threshold resist) model. This paper aims to show how to extract the information of the wafer image, how to optimize the OPC modeling with quickness, and how to increase the modeling accuracy for the entire pattern. In addition, this paper shows the excellent agreement between the simulation image and the wafer image for the critical layout of the sub 70 nm technology node memory devices.
机译：在OPC（光学邻近校正）过程中，最重要的任务是建立一个可以模拟光学行为的模型数据库，同时仍然根据经验对抗蚀剂显影进行表征。光刻模型生成的先前方法在很大程度上依赖于一维CD（临界尺寸）测量，其中包含数百个代表不同尺寸，形状和间距的特征。尽管有大量的实验数据，但是由于二维点（如线端，接触点和角点）中的测量点和模拟点之间的不匹配，仍然可能会出现明显的模型误差。由于需要大量的数据，因此获得模型需要大量的计算工作是很自然的。本文中的方法基于具有2D图像（即SEM图像或严格的模拟图像）的拟合模型。毫不夸张地说2D晶圆图像值得进行数千次CD测量。这种方法能够覆盖对称和非对称图案，并防止阈值水平因CTR（恒定阈值抗蚀剂）模型而发生不适当的摆动。本文旨在说明如何提取晶圆图像信息，如何快速优化OPC建模以及如何提高整个图案的建模精度。此外，本文还展示了对于70纳米以下技术节点存储器件的关键布局，仿真图像和晶圆图像之间的出色一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号