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Evanescent wave imaging in optical lithography

机译:光刻中的van逝波成像

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摘要

New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71, Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.
机译:介绍了e逝成像在微光刻中的新应用。使用van逝波光刻(EWL)在193nm ArF准分子激光波长下以1.85NA在26nm分辨率下记录折射率为1.71的光致抗蚀剂中的图像。此外,使用is逝波辅助技术描述了光掩模增强效果的特征(EWAF)利用了结合在基质吸收剂表面的bound逝能量的耦合,从而通过耦合干扰增强了掩模开口的透射率。

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