AlGaInAs quantum-well lasers with semi-insulating buried-heterostructure for high-speed direct modulation up to 40 Gbps

著录项

• 来源
  《Optoelectronic materials and devices IV》|2009年|P.76311Q.1-76311Q.9|共9页
• 会议地点 Shanghai(CN)
• 作者

  K. Otsubo; M. Matsuda; K. Takada; S. Okumura; A. Uetake; M. Ekawa; T. Yamamoto;

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• 作者单位

  Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10 Sekiguchi, Bunkyo-ku, Tokyo 112-0014, Japan;

  rnFujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Optoelectronic Industry and Technology Development Association (OITDA), 1-20-10 Sekiguchi, Bunkyo-ku, Tokyo 112-0014, Japan;

  rnFujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan;

  rnFujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan;

  rnFujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan Fujitsu Limited,;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 光电子技术、激光技术;
• 关键词

  directly-modulated lasers; AlGalnAs MQW; DFB lasers; distributed reflector lasers; semi-insulating buried- heterostructure; 25 Gbps; 40 Gbps;

  机译：直接调制激光器； AlGalnAs MQW； DFB激光器；分布式反射器激光器；半绝缘埋层异质结构； 25 Gbps； 40 Gbps;