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TOF and TFT mobilities in polycrystalline thin films of liquid crystalline material

机译:液晶材料的多晶薄膜中的TOF和TFT迁移率

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We have fabricated polycrystalline thin films of liquid crystalline oligothiophene derivatives of ω, ω>'-dioctylterthiophene (8-TTP-8) and ω, ω'-dihexylqua rterthiophene (6-QTP-6). In order to evaluate carrier transport properties of the polycrystalline films in lateral and vertical orientations, we measured them by time-of-flight (TOF) experiments with sandwich type of liquid crystal cells and evaluating device performances of thin film transistors (TFTs) fabricated on SiO_2/Si, respectively. Because of the liquid crystallinity, we could observe non-dispersive transient photocurrents in polycrystalline films of 8-TTP-8 in spite of thick sample of 16 μm, and determine hole mobility to be 0.3 cm~2/Vs. Because of the same reason, in spin-coated thin film of 8-TTP-8, where 8-TTP-8 molecules sit perpendicular to the substrate, the field effect transistor (FET) mobility was successfully determined to be 0.1 cm~2/Vs. In the same way, we have obtained the TOF and FET mobility for 6-QTP-6 to be 0.03 and 0.04 cm~2/Vs, respectively. On the basis of the present results, we discuss the benefits of the liquid crystallinity in fabricating polycrystalline films as an organic semiconductor for device applications.
机译:我们已经制备了ω,ω>′-二辛基对噻吩(8-TTP-8)和ω,ω′-二己基四噻吩(6-QTP-6)的液晶低聚噻吩衍生物的多晶薄膜。为了评估横向和垂直方向上的多晶薄膜的载流子传输特性,我们通过飞行时间(TOF)实验和三明治型液晶单元对其进行了测量,并评估了在其上制造的薄膜晶体管(TFT)的器件性能。分别为SiO_2 / Si。由于液晶性,尽管样品厚度为16μm,我们仍可以观察到8-TTP-8多晶膜中的非分散瞬态光电流,并将空穴迁移率确定为0.3 cm〜2 / Vs。由于相同的原因,在8-TTP-8的旋涂薄膜中,其中8-TTP-8分子垂直于基板,因此成功确定了场效应晶体管(FET)的迁移率为0.1 cm〜2 / VS.同样,我们获得了6-QTP-6的TOF和FET迁移率分别为0.03和0.04 cm〜2 / Vs。根据目前的结果,我们讨论了液晶性在制造多晶膜作为器件应用的有机半导体中的好处。

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