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Liquid crystalline thin films as a precursor for polycrystalline thin films aimed at field effect transistors

机译:液晶薄膜作为针对场效应晶体管的多晶薄膜的前体

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摘要

We have investigated the availability of liquid crystalline thin films as a precursor of quality polycrystalline thin films for organic field effect transistors (OFETs) by solution process. The experiments of spin-coating at various temperatures proved that the morphology of resulting polycrystalline thin films at room temperature strongly depend on what the films immediately after spin-coating and solvent evaporation at those temperatures were, i.e., crystal, liquid crystal, or isotropic liquid. The polycrystalline films spin-coated at the temperatures for crystal and isotropic liquid phases were much roughened owing to many small crystal flakes and droplets. On the other hand, the thin films spin-coated at liquid crystal temperatures were very uniform in a whole area and showed high FET mobility having a small variation from device to device.
机译:我们已经研究了通过溶液工艺将液晶薄膜作为有机场效应晶体管(OFET)的高质量多晶薄膜的前体的可用性。在各种温度下进行旋涂的实验证明,室温下所得多晶薄膜的形态在很大程度上取决于旋涂和在这些温度下溶剂蒸发后立即形成的薄膜,即晶体,液晶或各向同性液体。 。由于许多小的晶体薄片和小滴,在晶体和各向同性液相的温度下旋涂的多晶膜被粗糙化了。另一方面,在液晶温度下旋涂的薄膜在整个区域上非常均匀,并且显示出高FET迁移率,并且随器件的变化很小。

著录项

  • 来源
    《Journal of Applied Physics》 |2011年第1期|p.926-930|共5页
  • 作者

    Hiroaki lino; Jun-ichi Hanna;

  • 作者单位

    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, JI-2, 4259 Nagatsuta,Midori-ku, Yokohama 226-8503, Japan and Japan Science and Technology Agency (JST), Core Research for Evolutional Science and Technology (CREST), 4-1-8 Hon-cho, Kawaguchi 332-0012, Japan;

    Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, JI-2, 4259 Nagatsuta,Midori-ku, Yokohama 226-8503, Japan and Japan Science and Technology Agency (JST), Core Research for Evolutional Science and Technology (CREST), 4-1-8 Hon-cho, Kawaguchi 332-0012, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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