Mask Etcher Data Strategy for 45nm and Beyond

机译：适用于45nm及更高版本的Mask Etcher数据策略

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Mask Etching for the 45nm technology node and beyond requires a system-level data and diagnostics strategy. This necessity stems from the need to control the performance of the mask etcher to increasingly stringent and diverse requirements of the mask production environment. Increasing mask costs and the capability to acquire and consolidate a wealth of data within the mask etch platform are primary motivators towards harnessing data mines for feedback into the mask etching optimization. There are offline and real-time possibilities and scenarios. Here, we discuss the data architecture, acquisition, and strategies of the Applied Materials Tetra II™ Mask Etch System.

机译：用于45nm及更高工艺节点的掩模蚀刻需要系统级的数据和诊断策略。这种必要性源于对掩模蚀刻机的性能进行控制以适应掩模生产环境日益严格和多样化的要求。掩膜成本的增加以及在掩膜蚀刻平台内获取和整合大量数据的能力是促使利用数据挖掘以将反馈反馈到掩膜蚀刻优化中的主要动力。有离线和实时的可能性和方案。在这里，我们讨论了Applied Materials Tetra II™掩模蚀刻系统的数据架构，获取和策略。

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来源
《Photomask and Next-Generation Lithography Mask Technology XIII pt.2》|2006年|P.62831W.1-62831W.6|共6页
会议地点 Yokohama(JP)
作者
Richard Lewington; Ibrahim M.Ibrahim; Sheeba Panayil; Ajay Kumar; John Yamartino;
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作者单位

Applied Materials Inc., Etch Products Business Group, 974 E. Arques Avenue, Sunnyvale, CA 94085;

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会议组织
原文格式 PDF
正文语种 eng
中图分类印刷电路;半导体器件制造工艺及设备;
关键词
mask etcher; 45 nm; data acquisition; EDA;

机译：掩模蚀刻机; 45 nm;数据采集; EDA;

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专利

1. Model-based mask verification on 45nm logic gate masks [J] . F. Sundermann, J. Wiley, N. Hayashi Solid state technology . 2008,第9期

机译：在45nm逻辑门掩模上基于模型的掩模验证
2. Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application [J] . Cummins Cian, Ghoshal Tandra, Holmes Justin D., Advanced Materials . 2016,第27期

机译：使用用于蚀刻掩模功能的纳米嵌段共聚物薄膜进行无机掺入的策略和纳米技术应用
3. Physics and process drive etch performance at 45nm [J] . ROBIN CHEUNG, DAN HOFFMAN Solid state technology . 2005,第3期

机译：物理和工艺驱动45nm蚀刻性能
4. Mask Etcher Data Strategy for 45nm and Beyond [C] . Richard Lewington, Ibrahim M.Ibrahim, Sheeba Panayil, Conference on Photomask and Next-Generation Lithography Mask Technology . 2006

机译：面膜蚀刻器数据策略为45nm及以后
5. Mechanisms and development of etch resistance for highly aromatic monomolecular etch masks: Towards molecular lithography. [D] . Jarvholm, Erik Jonas. 2007

机译：高度芳族单分子蚀刻掩模的抗蚀刻性机理和发展：迈向分子光刻。
6. A data preprocessing strategy for metabolomics to reduce the mask effect in data analysis [O] . Jun Yang, Xinjie Zhao, Xin Lu, 2015

机译：代谢组学的数据预处理策略可减少数据分析中的掩盖效应
7. Highly selective and vertical etch of silicon dioxide using ruthenium films as an etch mask [O] . William J. Mitchell, Brian J. Thibeault, Demis D. John, 2021

机译：使用钌膜作为蚀刻面罩的高度选择性和垂直蚀刻二氧化硅
8. Smart 45nm Foundry CMOS with Mask-Lite (trademark) Reduced Mask Costs. [R] . Chaney, R. L., Wilson, D. G., Hackler, S. D., 2011

机译：具有mask-Lite（商标）的智能45nm铸造CmOs降低了掩模成本。

Mask Etcher Data Strategy for 45nm and Beyond

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