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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Study of Heating Effect on CAR in Electron Beam Mask Writing
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Study of Heating Effect on CAR in Electron Beam Mask Writing

机译：电子束掩模写入中CAR对热效应的研究

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摘要

Heating effect was evaluated for EBM-6000 which is operated at high current density of 70A/cm~2 and acceleration voltage of 50kV. FEP171 as widely used for current productions and lower sensitivity resists are tested. Lower sensitivity resist is one of key items to achieve highly accurate Local critical dimension uniformity (LCDU) because of shot noise reduction. CD variations in experiment are compared with simulated temperature changes induced by heating effect. Then, the ratio, ΔCD/ΔT, is found mostly constant for every resist, 0.1 nm/C°. Writing conditions are estimated to meet CDU spec of hp45 generation for a worst case pattern, i.e. 100% density pattern. For FEP171, the maximum shot size of 0.85 μm shot size at 2pass writing mode is sufficient. It should be reduced to 0.5 μm at 2pass writing mode for every lower sensitivity resist. When 4pass writing mode is used, the maximum shot size of 0.85 μm is available. Writing conditions and writing time for realistic patterns are also discussed.
机译：评价了在70A / cm〜2的高电流密度和50kV的加速电压下运行的EBM-6000的加热效果。测试了FEP171，该产品被广泛用于当前的产品和较低灵敏度的抗蚀剂。由于降低了散粒噪声，因此较低灵敏度的抗蚀剂是获得高精度的局部临界尺寸均匀性（LCDU）的关键项目之一。将实验中的CD变化与加热效应引起的模拟温度变化进行比较。然后，发现对于每个抗蚀剂来说，ΔCD/ΔT之比几乎恒定，为0.1nm / C°。对于最坏的情况（即100％密度），估计写入条件满足hp45代的CDU规范。对于FEP171，在2pass写入模式下，最大打印量为0.85μm足够。对于每个较低灵敏度的抗蚀剂，应在2pass写入模式下将其减小至0.5μm。当使用4pass写入模式时，最大注射量为0.85μm。还讨论了现实模式的书写条件和书写时间。

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