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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Dry Etch Behaviour of Different TaN Absorber Layers for EUVL Mask Making
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Dry Etch Behaviour of Different TaN Absorber Layers for EUVL Mask Making

机译：用于EUVL掩模制造的不同TaN吸收层的干蚀行为

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摘要

Extreme Ultraviolet Lithography (EUVL) is the favourite next generation lithography candidate for IC device manufacturing with feature sizes beyond 32nm. Different absorber layers and manufacturing concepts have been published for the fabrication of reflective EUVL masks. A mandatory step in the EUVL mask making is the patterning of sub 100nm features. The layer composition of such a TaN absorber consists of an anti reflective coating (ARC) on top of a base layer. We investigated the dry etch behaviour of TaN based absorbers with four different top ARC layers. Our focus was to determine a dependency of patterning criteria e.g. etch selectivity, minimum resolution, CD uniformity and linearity on the different ARC layers. Before, the deposition parameters of the top ARC layers have been optimized by SCHOTT Lithotec towards minimum stress and the appropriate reflectance property at the 257nm inspection wavelength. The mask blank exposure was done on a 50kV Vistec SB350 MW variable shaped e-beam writer using a 300nm thick Fuji FEP 171 resist film. Our test pattern covered a quality area of 132mm x 132mm and comprised dense/iso line structures and contacts from 60nm-1200nm. Testmasks with the four different TaN based absorbers have been dry etched on an Oerlikon mask etcher III. The dry etch recipe and parameters have been kept constant for the different absorber testmasks. Line and contact hole patterns with a minimum feature size of ～70nm and perpendicular profiles have been realized. CD uniformity on 180nm L&S and linearity measurements on dense and iso features from 100nm-1200nm have been carried out. Overall, a TaN based absorber including dry etch process has been developed, able to fulfill the requirements for IC device manufacturing with feature sizes down to 22nm - suitable for EUV-Lithography.
机译：极紫外光刻（EUVL）是IC器件制造中最受欢迎的下一代光刻候选，其特征尺寸超过32nm。已经公开了用于反射EUVL掩模的制造的不同吸收层和制造概念。 EUVL掩模制造中的必要步骤是对100nm以下的特征进行构图。这种TaN吸收剂的层组成由位于基层顶部的抗反射涂层（ARC）组成。我们研究了具有四个不同顶部ARC层的基于TaN的吸收剂的干法刻蚀行为。我们的重点是确定图案标准的依赖性，例如蚀刻选择性，最小分辨率，CD均匀性和不同ARC层上的线性。以前，SCHOTT Lithotec已对顶层ARC层的沉积参数进行了优化，以实现最小应力和在257nm检查波长处的适当反射特性。掩模空白曝光是在50kV Vistec SB350 MW可变形状电子束记录器上进行的，使用的是300nm厚的Fuji FEP 171抗蚀剂膜。我们的测试图案覆盖了132mm x 132mm的质量区域，并包含60nm-1200nm的密集/ iso线结构和触点。具有四种不同的基于TaN的吸收剂的测试掩模已在Oerlikon掩模蚀刻机III上进行了干法蚀刻。对于不同的吸收剂测试掩模，干蚀刻配方和参数保持恒定。已经实现了最小特征尺寸约为70nm的线和接触孔图案以及垂直轮廓。已经进行了180nm L＆S上的CD均匀性以及100nm-1200nm上的稠密和iso特征的线性测量。总的来说，已经开发出了一种基于TaN的吸收剂，包括干法蚀刻工艺，该器件能够满足特征尺寸低至22nm的IC器件制造的要求-适用于EUV光刻。

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