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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells
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In-plane quantum-dot superlattices of InAs on GaAsSb/GaAs(001) for intermediate band solar-cells

机译：GaAsSb / GaAs（001）上InAs的面内量子点超晶格用于中带太阳能电池

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Semiconductor quantum-dot superlattices (QD-SLs) have attracted considerable interests for intermediate band solar-cell (IB-SC) applications. In this study, in order to develop the IB-SCs using in-plane QD-SLs, ultra-high density InAs QDs with 4.0×1011 cm-2 were grown on the GaAsSb/GaAs(001) by molecular beam epitaxy. The average lateral size and height of the InAs QDs were 17 nm and 2.8 nm, respectively. In spite of the closely-packed QD structure, the coalescence of neighbouring QDs was effectively suppressed by the Sb surfactant effect. The in-plane QD-SL characteristics based on the minibands were confirmed by photoluminescence (PL) properties. The InAs QD-SLs were capped by the GaAsSb layers to construct a type-2 band alignment. From time-resolved PL measurements, long carrier lifetime of 6.9 ns was obtained for the in-plane InAs QDs with the GaAsSb capping layer. Internal quantum efficiency (IQE) of the IB-SCs using the in-plane InAs/GaAsSb QD-SLs was evaluated, and the extended IQE was observed from 900 nm to 1300 nm. It was attributed to the optical absorption at the GaAsSb layers and the InAs QDs. The IB-SCs including three stacked in-plane QD-SLs enhanced the extended IQE.
机译：半导体量子点超晶格（QD-SL）已引起中频太阳能电池（IB-SC）应用的极大兴趣。在这项研究中，为了使用面内QD-SL开发IB-SC，通过分子束外延在GaAsSb / GaAs（001）上生长了具有4.0×1011 cm-2的超高密度InAs QD。 InAs QD的平均横向尺寸和高度分别为17 nm和2.8 nm。尽管QD结构紧密堆积，但Sb表面活性剂效应有效抑制了相邻QD的聚结。通过光致发光（PL）特性确认了基于微带的面内QD-SL特性。 InAs QD-SL被GaAsSb层覆盖，以构建2型能带排列。通过时间分辨的PL测量，对于具有GaAsSb覆盖层的面内InAs QD，获得了6.9 ns的长载流子寿命。评估了使用面内InAs / GaAsSb QD-SL的IB-SC的内部量子效率（IQE），并观察到从900 nm到1300 nm的扩展IQE。这归因于在GaAsSb层和InAs量子点处的光吸收。包括三个堆叠的平面QD-SL的IB-SC增强了扩展的IQE。

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