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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Growth and properties of Cu(In, Ga)(S, Se)2 films
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Growth and properties of Cu(In, Ga)(S, Se)2 films

机译：Cu（In，Ga）（S，Se）2薄膜的生长和性能

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摘要

Cu(In, Ga)(S, Se)2 (CIGSSe) films were grown on Mo/soda-lime glass substrates in a three-stage process using a molecular beam epitaxy apparatus equipped with an rf-cracked S-radical beam source. CIGSSe films have been studied for their application in the development of solar cells with wide-bandgap semiconductors. The S/(S+Se) composition ratios in the fabricated films were determined from electron probe microscopy analysis (EPMA), and scanning electron microscopy (SEM) images of the films were obtained. The results showed that the grain sizes in the films decreased with increasing S concentrations. The surfaces of the films with higher S/(S+Se) composition ratios had greater roughness. To determine the compositional depth profile of the films, the acceleration voltage dependencies of EPMA on the S/(S+Se) ratios, and the group-VI atoms (S and Se) were obtained. The fabricated CIGSSe solar cell achieved an efficiency of 15% and had a fill factor of 0.72. However, since the open circuit voltage was lower than the expected value improvement in the band profile is necessary.
机译：使用配备有射频裂纹的S自由基束源的分子束外延设备，以三阶段工艺在Mo /钠钙玻璃衬底上生长Cu（In，Ga）（S，Se）2（CIGSSe）膜。研究了CIGSSe膜在带隙半导体半导体太阳能电池开发中的应用。通过电子探针显微镜分析（EPMA）确定所制造的膜中的S /（S + Se）组成比，并获得膜的扫描电子显微镜（SEM）图像。结果表明，随着S浓度的增加，薄膜的晶粒尺寸减小。具有较高的S /（S + Se）组成比的膜的表面具有较大的粗糙度。为了确定膜的组成深度分布，获得了EPMA对S /（S + Se）比和VI族原子（S和Se）的加速电压依赖性。制成的CIGSSe太阳能电池的效率达到15％，填充系数为0.72。但是，由于开路电压低于期望值，因此需要改善频带分布。

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