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Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides

机译：演示InGaAs / InP多量子阱波导中的低功率非线性

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Abstract: We report both linear and nonlinear grating coupling to a planar multiple quantum well (MQW) waveguide grown by chemical beam epitaxy. We demonstrate a strong dependence of the coupling angle on the incident power in the wavelength range $lambda $EQ 1.57 $MIN 1.60 $mu@m. The obtained nonlinear variation of n$-eff$/ were found to be negative, and on the order of 10$+$MIN@3$/, in agreement with many-body calculations performed by the authors. We show that thermal effects can be ruled out. At coupled light intensity as low as 40 mW, nonlinear switching condition was achieved; the power density to obtain the switching process is substantially lower than in previous works. As part of this work, we report the systematic investigation of the linear and nonlinear absorption properties of several InGaAs/InP MQW structures, measuring a series of transmission spectra in the region of the band edge for various pump intensities and observing large changes in the absorption coefficient. Through comparison with these results, we speculate that the mechanism responsible for the refractive nonlinearity observed in the waveguide is consistent with purely excitonic effects. !16
机译：摘要：我们报告线性和非线性光栅耦合到化学束外延生长的平面多量子阱（MQW）波导。我们证明了耦合角在波长范围$ lambda $ EQ 1.57 $ MIN 1.60 $ mu @ m上对入射功率的强烈依赖性。发现获得的n $ -eff $ /非线性变化为负值，约为10 $ + $ MIN @ 3 $ /，与作者进行的多体计算相符。我们表明可以排除热效应。在低至40 mW的耦合光强度下，实现了非线性切换条件。获得开关过程的功率密度大大低于以前的工作。作为这项工作的一部分，我们报告了对几种InGaAs / InP MQW结构的线性和非线性吸收特性的系统研究，测量了不同泵浦强度在带边缘区域的一系列透射光谱，并观察了吸收的大变化系数。通过与这些结果进行比较，我们推测负责波导中观察到的非线性非线性的机理与纯激子效应是一致的。 ！16

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