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首页> 外文会议>Physical Concepts and Materials for Novel Optoelectronic Device Applications II >Insight into optical gain effects in InGaAs/InP multiple-quantum-well laser diodes observed by uniaxial stress
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Insight into optical gain effects in InGaAs/InP multiple-quantum-well laser diodes observed by uniaxial stress

机译：通过单轴应力观察InGaAs / InP多量子阱激光二极管的光学增益效应

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Abstract: The inclusion of tensile strain in the active region of long wavelength laser diodes has been shown to improve the device efficiency and alter the polarization output. It has been proposed that this is due to the effect of strain on the valence band structure and a subsequent change in the polarization selection rules. We have used uniaxial stress to simulate tensile strain in the active region of bulk 1.55 $mu@m InGaAsP laser diodes and lattice matched 1.55 $mu@m InGaAs multiple quantum well laser diodes. We observed an increase in transverse electric (TE) threshold current in both types of device, but with different rates of change in the lasing wavelength with stress. To understand the observed increase in threshold current we modeled the bulk device using a 4 $MUL 4 Luttinger-Kohn Hamiltonian and then used this to qualitatively explain the change found in the quantum well device. The loss mechanisms of Auger recombination and intervalence band absorption (IVBA) were found to play a significant role in the increase in (TE) threshold current with applied stress. !16
机译：摘要：已证明在长波长激光二极管的有源区中包含拉伸应变可提高器件效率并改变偏振输出。已经提出，这是由于应变对价带结构的影响以及偏振选择规则的随后变化。我们已经使用单轴应力模拟了块状1.55μmInGaAsP激光二极管和晶格匹配的1.55μμmInGaAs多量子阱激光二极管在有源区内的拉伸应变。我们观察到两种类型的设备中的横向电（TE）阈值电流都有所增加，但是激光波长随应力的变化率不同。为了了解观察到的阈值电流的增加，我们使用4 $ MUL 4 Luttinger-Kohn Hamiltonian建模了大型器件，然后用它定性地解释了量子阱器件中的变化。发现俄歇重组和间隔带吸收（IVBA）的损失机制在施加应力的情况下在（TE）阈值电流增加中起重要作用。 ！16

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