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In-situ structured MBE-grown crystals for a

机译：原位结构MBE生长的晶体用于

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Abstract: We present the shadow mask molecular beam epitaxial (MBE) growth technique which allows an in situ lateral structuring of the doping profile and the growth rate on a $mu@m scale. The electrical dc characteristics show that excellent quality selective contacts have been achieved on devices with lateral dimensions down to the $mu@m range. The leakage currents are, even for highly doped structures, in the nA range. High reflectivity Bragg mirrors and pronounced exciton peaks observed on MQW structures confirm the high quality of the regrown material. The influence of the aspect ratio on the growth rates is very small. We have applied this novel technique to fabricate various selectively contacted optoelectronic devices based on n- i-p-i doping superlattices. For GaAs Franz Keldysh n-i-p-i modulators with selective contacts an on/off ratio of 6:1 has been achieved. High frequency results obtained on medium size devices indicate that 3 dB frequencies in the GHz range should be possible for n-i-p-i devices with dimensions $LS 4 $mu@m fabricated with this technique. By selectively contacting the QWs in a modulation doped hetero n-i-p-i structure constructive superposition of field and carrier induced absorption changes have been achieved. !10
机译：摘要：我们提出了一种荫罩分子束外延（MBE）生长技术，该技术可实现掺杂轮廓的原位横向结构化以及以$μm的规模生长。直流电特性表明，在横向尺寸低至$μm范围的器件上，已经实现了优质的选择性接触。即使对于高度掺杂的结构，泄漏电流也处于nA范围内。在MQW结构上观察到的高反射率布拉格镜和明显的激子峰证实了再生长材料的高质量。长宽比对增长率的影响很小。我们已经应用了这种新颖的技术来制造基于n-i-p-i掺杂超晶格的各种选择性接触的光电器件。对于具有选择性触点的GaAs Franz Keldysh n-i-p-i调制器，已经实现了6：1的开/关比。在中型设备上获得的高频结果表明，对于尺寸为$ LS 4 $μm的n-i-p-i设备，采用该技术制造的GHz范围内应有3 dB的频率。通过在调制掺杂的异质子n-i-p-i结构中选择性地接触QW，已经实现了场和载流子诱导的吸收变化的建设性叠加。 ！10

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