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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Improving Photonic-electronic Characteristics in Quantum-dot Solar Cells via Lattice Strain Mechanisms
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Improving Photonic-electronic Characteristics in Quantum-dot Solar Cells via Lattice Strain Mechanisms

机译：通过晶格应变机制改善量子点太阳能电池的光电子特性

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摘要

Epitaxially formed indium arsenide quantum dot (QD) structures formed by the Stranski-Krastanov growth mode have been investigated with respect to how quantum confinement and lattice strain behavior affects the optoelectronic performance in p-i-n type InGaAs devices. The introduction of a correction layer and the proper selection of the QD capping layer's alloy and thickness parameters allowed the control and management of the lattice misfit in two QD structures, which led to reduced defects and improved dark current behavior under forward bias conditions when compared to an InGaAs p-n homojunction (HOM) device without quantum-dots. Although the dark-current of the HOM devices behaved as expected under forward and reverse biases, the QD device structures displayed an apparent anomalous behavior in their dark-current densities under forward and reverse biases. Closer analysis reveals that this behavior is not anomalous; instead the information gained can be used to extract greater understanding about how to optimize the optoelectronic performance in quantum confined structures. In addition, the analysis suggests that lattice strain behavior continues to be a critical benchmark for defining and optimizing the performance of epitaxially formed QD devices.
机译：关于量子限制和晶格应变行为如何影响p-i-n型InGaAs器件的光电性能，已经研究了由Stranski-Krastanov生长模式形成的外延形成的砷化铟量子点（QD）结构。引入校正层以及正确选择QD覆盖层的合金和厚度参数后，可以控制和管理两个QD结构中的晶格失配，与前者相比，可以减少缺陷并改善正向偏置条件下的暗电流行为。没有量子点的InGaAs pn同质结（HOM）器件。尽管HOM器件的暗电流在正向和反向偏置下表现出预期的性能，但QD器件结构在正向和反向偏置下其暗电流密度显示出明显的异常行为。进一步的分析表明，这种行为并非异常。取而代之的是，获得的信息可用于提取更多关于如何优化量子受限结构中光电性能的理解。此外，分析表明，晶格应变行为仍然是定义和优化外延形成的QD器件性能的关键基准。

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