High current generation in dilute nitride solar cells grown by Molecular Beam Epitaxy

机译：通过分子束外延生长在稀氮化硅太阳能电池中产生高电流

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We review our recent work concerning the development of dilute nitride solar cells by molecular beam epitaxy. This epitaxial technology enables a high level of control of the growth conditions and alleviates known issues related to epitaxy of dilute nitrides ultimately enabling to achieve high quality materials suitable for solar cell developments. In particular, we focus on discussing the mechanisms linking the epitaxial and annealing conditions to the operation of dilute nitride solar cells. We also report operation of a single junction dilute nitride solar cell with a short circuit current density as high as ～39 mA/cm~2 under 1 sun illumination.

机译：我们回顾了有关分子束外延发展稀氮化硅太阳能电池的最新工作。这种外延技术能够高度控制生长条件，并缓解了与稀氮化物外延有关的已知问题，最终实现了适合太阳能电池开发的高质量材料。特别地，我们专注于讨论将外延和退火条件与稀氮化物太阳能电池的操作联系起来的机制。我们还报道了在1个太阳光照射下，短路电流密度高达〜39 mA / cm〜2的单结稀氮化硅太阳能电池的运行情况。

著录项

来源
《Physics, simulation, and photonic engineering of photovoltaic devices II》|2013年|86201I.1-86201I.6|共6页
会议地点 San Francisco CA(US)
作者
A. Aho; A. Tukiainen; V. Polojaervi; J. Salmi; M. Guina;
展开▼
作者单位

Optoelectronics Research Centre, Tampere University of Technology P.O.B. 692, FIN-33101, Finland;

Optoelectronics Research Centre, Tampere University of Technology P.O.B. 692, FIN-33101, Finland;

Optoelectronics Research Centre, Tampere University of Technology P.O.B. 692, FIN-33101, Finland;

Optoelectronics Research Centre, Tampere University of Technology P.O.B. 692, FIN-33101, Finland;

Optoelectronics Research Centre, Tampere University of Technology P.O.B. 692, FIN-33101, Finland;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
multi-junction solar cells; dilute nitrides; molecular beam epitaxy; high efficiency solar cells;

机译：多结太阳能电池；稀氮化物分子束外延高效太阳能电池;

相似文献

外文文献
中文文献
专利

1. Defect properties of solar cells with layers of CaP based dilute nitrides grown by molecular beam epitaxy [J] . Artem I. Baranov, Alexander S. Gudovskikh, Anton Yu. Egorov, Journal of Applied Physics . 2020,第2期

机译：用分子束外延生长基于覆盖稀氮化物层的太阳能电池的缺陷性能
2. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy [J] . David B. Jackrel, Seth R. Bank, Homan B. Yuen, Journal of Applied Physics . 2007,第11期

机译：分子束外延稀释氮化镓GaInNAs和GaInNAsSb太阳能电池
3. InAs/GaAs QDs and dilute nitride QWs VCSELs grown by molecular beam epitaxy [J] . Optoelectronics and Advanced Materials-Rapid Communications . 2016,第2016期

机译：通过分子束外延生长的InAs / GaAs QD和稀氮化物QW VCSEL
4. LATTICE MATCHED DILUTE NITRIDE MATERIALS FOR III-V HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELLS: GROWTH PARAMETER OPTIMIZATION IN MOLECULAR BEAM EPITAXY [C] . Arto Aho, Antti Tukiainen, Ville Poloj?rvi, European Photovoltaic Solar Energy Conference and Exhibition . 2011

机译：III-V型高效能多结太阳能电池的晶格匹配稀氮化物：分子束表位的生长参数优化
5. Development of III-V dilute nitride-based solar cells grown by chemical beam epitaxy [D] . Fotkatzikis, Aristotelis 2007

机译：由化学束外延生长的III-V稀氮化物的太阳能电池的研制
6. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy [O] . Shulong Lu, Lian Ji, Wei He, 2011

机译：全固态分子束外延生长的高效GaAs和GaInP太阳能电池
7. Photoluminescence blueshift mechanisms in molecular beam epitaxy grown dilute nitride hetrostructures [O] . VIVEK DIXIT 2009

机译：分子束外延生长的稀氮化物异质结构中的光致发光蓝移机理

High current generation in dilute nitride solar cells grown by Molecular Beam Epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅