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首页> 外文会议>Physics and technology of high-k materials 9 >Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics
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Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics

机译：电子辐照对原子层沉积的高k栅极电介质的影响

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摘要

Electron radiation effects on the electrical properties of Al_2O_3 and HfO_2-based MIS capacitors have been studied. High-k dielectrics were grown by atomic layer deposition, and capacitors were exposed to three different electron radiation doses. Capacitancevoltage, deep-level transient spectroscopy, conductance transients, flat-band voltage transients and current-voltage techniques were used to characterize the samples. In all cases, positive charge is trapped in the dielectrics after irradiation. Insulator/semiconductor interface quality can be improved for low irradiation doses. However, for high doses interface quality worsens. Irradiation always degrades the dielectric layers in terms of gate leakage current.
机译：研究了电子辐射对Al_2O_3和HfO_2基MIS电容器电学性能的影响。高k电介质通过原子层沉积生长，电容器暴露于三种不同的电子辐射剂量。电容电压，深层瞬态光谱，电导瞬变，平带电压瞬变和电流-电压技术用于表征样品。在所有情况下，辐照后正电荷都被捕获在电介质中。对于低辐照剂量，可以提高绝缘体/半导体界面的质量。然而，对于高剂量，界面质量变差。就栅极泄漏电流而言，辐射总是会使介电层退化。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者

    H. Garcia; H. Castan; S. Duenas; L. Bailon; F. Campabadal; J. M. Rafi; M. Zabala; O. Beldarrain; H. Ohyama; K. Takakura; I. Tsunoda;

  • 作者单位

    Departamento de Electricidad y Electronica, ETSI Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electronica, ETSI Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electronica, ETSI Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;

    Departamento de Electricidad y Electronica, ETSI Telecomunicacion, Universidad de Valladolid, 47011 Valladolid, Spain;

    Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra, Spain;

    Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra, Spain;

    Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra, Spain;

    Institut de Microelectronica de Barcelona (IMB-CNM), CSIC, Campus UAB, 08193 Bellaterra, Spain;

    Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102, Japan;

    Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102, Japan;

    Department of Electronic Engineering, Kumamoto National College of Technology, Kumamoto 861-1102, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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